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高崎量子応用研究所

研究発表 - プロジェクト半導体照射効果研究

掲載日:2018年12月26日更新
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- 2017 - (平成29年)

  1. "Stimulated emission from nitrogen-vacancy centers in diamond,"J. Jeske, D. Lau, X. Vidal, L. McGuinness, P. Reineck, B. Johnson, M. Doherty, J. McCallum, S. Onoda, F. Jelezko, T. Ohshima, T. Volz, J. Cole, B. Gibson, A. Greentree,Nat. Comm. 8 (2017) 14000-1-8.
  2. "Radiation degradation characteristics of component subcells in inverted metamorphic triple-junction solar cells irradiated with electrons and protons,"M. Imaizumi, T. Nakamura, T. Takamoto, T. Ohshima, M. Tajima,Prog. Photovolt. Res. Appl. 25 (2017) 161–174.
  3. "Fluorescent color centers in laser ablated 4H-SiC nanoparticles,"
    S. Castelletto, A. F. M. Almutairi, G. Thalassinos, A. Lohrmann, R. Buividas, D. W. M. Lau, P. Reineck, S. Juodkazis, T. Ohshima, B. C. Gibson, B. C. Johnson, Optics Letters 42 (2017) 1297-1300.
  4. "Impacts of gate bias and its variation on gamma-ray irradiation resistance of SiC MOSFETs,"K. Murata, S. Mitomo, T. Matsuda, T. Yokoseki, T. Makino, S. Onoda, A. Takeyama, T. Ohshima, S. Okubo, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata, Phys. Status Solidi A 214 (2017) 1600446-1-7.
  5. "Optimum structures for gamma-ray radiation resistant SiC-MOSFETs,"S. Mitomo, T. Matsuda, K. Murata, T. Yokoseki, T. Makino, A. Takeyama, S. Onoda, T. Ohshima, S. Okubo, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata, Phys. Status Solidi A 214 (2017) 1600425-1-7.
  6. "Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide,"H. Kraus, D. Simin, C. Kasper, Y. Suda, S. Kawabata, W. Kada, T. Honda, Y. Hijikata, T. Ohshima, V. Dyakonov, G. V. Astakhov, Nano Letters, 17 (2017) 2865–2870.
  7. "Locking of electron spin coherence above 20 ms in natural silicon carbide,"D. Simin, H. Kraus, A. Sperlich, T. Ohshima, G. V. Astakhov, V. Dyakonov, Phys. Rev. B 95 (2017) 161201(R)-1-5.
  8. "Scalable Quantum Photonics with Single Color Centers in Silicon Carbide,"M. Radulaski, M. Widmann, M. Niethammer, J. L. Zhang, .-Y. Lee, T. Rndler, K. G. Lagoudakis, N. T. Son, E. Janzén, T. Ohshima, J. Wrachtrup, J. Vučković,Nano Letters 17 (2017) 1782-1786.
  9. "Creation and Functionalization of Defects in SiC by Proton Beam Writing,"T. Ohshima, T. Honda, S. Onoda, T. Makino, M. Haruyama, T. Kamiya, T. Satoh, Y. Hijikata, W. Kada, O. Hanaizumi, A. Lohrmann, J. R. Klein, B. C. Johnson, J. C. McCallum, S. Castelletto, B. C. Gibson, H. Kraus, V. Dyakonov, G. V. Astakhov, Mater. Sci. Forum 897 (2017) 233-237.
  10. "4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics,"S-I. Kuroki, T. Kurose, H. Nagatsuma, S. Ishikawa, T.Maeda, H. Sezaki, T. Kikkawa, T. Makino, T. Ohshima, M. Östling, C.-M. Zetterling, Mater. Sci. Forum 897 (2017) 669-672.
  11. "Direct evaluation of influence of electron damage on the subcell performance in triple-junction solar cells using photoluminescence decays,"D. M. Tex, T. Nakamura, M. Imaizumi, T. Ohshima, Y. Kanemitsu, Scientific Reports 7 (2017) 1985-1-8.
  12. "Bright and photostable nitrogen-vacancy fluorescence from unprocessed detonation nanodiamond,"P. Reineck, M. Capelli, D. W. M. Lau, J. Jeske, M. R. Field, T. Ohshima, A. D. Greentree, B. C. Gibson, Nanoscale 9 (2017) 497-502.
  13. "Nanomechanical Sensing Using Spins in Diamond,"
    M. S. J. Barson, P. Peddibhotla, P. Ovartchaiyapong, K. Ganesa R. L. Taylor, M. Gebert, Z. Mielens, B. Koslowski, D. A. Simpson, L. P. McGuinness, J. McCallum, S. Prawer, S. Onoda, T. Ohshima, A. C. B. Jayich, F. Jelezko, N. B. Manson, M. W. Doherty, Nano Letters, 17 (2017) 1496–1503.
  14. "Transient current induced in thin film diamonds by swift heavy ions,"S.-I. Sato, T. Makino, T. Ohshima, T. Kamiya, W. Kada, O. anaizumi, V. Grilj, N. Skukan, M. Pomorski, G. Vizkelethy, Diamond & Related Materials 75 (2017) 161-168.
  15. "Electron beam irradiation effect on the mechanical properties of nanosilica-filled polyurethane films, "F. Dong, S. Maganty, S. J. Meschter, S. Nozaki, T. Ohshima, T. Makino, J. Cho, Polymer Degradation and Stability 141 (2017) 45-53.

- 2016 - (平成28年)

  1. "Nanodiamond-polycaprolactone composite: A new material for tissue engineering with sub-dermal imaging capabilities,"K. Fox, P. A. Tran, D. W. M. Lau, T. Ohshima, A. D. Greentree, B. C. Gibson, Mater. Lett. 185 (2016) 185-188.
  2. "Improvement of radiation response of SiC MOSFETs under high temperature and humidity circumstance,"A. Takeyama, T. Matsuda, T. Yokoseki, S. Mitomo, K. Murata, T. Makino, S. Onoda, S. Okubo, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata, T. Ohshima, Jpn. J. Appl. Phys. 55 (2016) 104101-1-4.
  3. "Charge multiplication effect in thin diamond films,"N. Skukan, V. Grilj, I. Sudić, M. Pomorski, W. Kada, T. Makino, Y. Kambayashi, Y. Andoh, S. Onoda, S. Sato, T. Ohshima, T. Kamiya, M. Jakšić, Appl. Phys. Lett. 109 (2016) 043502-1-5.
  4. "Effect of gamma-ray irradiation on the device process-induced defects in 4H-SiC epilayers,"T. Miyazaki, T. Makino, A. Takeyama, S. Onoda, T. Ohshima, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata, Superlattices and Microstructures 99 (2016) 197-201.
  5. "Collective strong coupling with homogeneous Rabi frequencies using a 3D lumped element microwave resonator,"A. Angerer, T. Astner, D. Wirtitsch, H. Sumiya, S. Onoda, J. Isoya, S. Putz, J. Majer, App. Phys. Lett. 109 (2016) 033508.
  6. "Towards a spin-ensemble quantum memory for superconducting qubits,"C. Grezes, Y. Kubo, B. Julsgaard, T. Umeda, J. Isoya, H. Sumiya, H. Abe, S. Onoda, T. Ohshima, K. Nakamura, I. Diniz, A. Auffeves, V. Jacques, J. Roch, D. Vion, D. Esteve, K. Moelmer, P. Bertet,
    C. R. Physique 17 (2016) 693-704.
  7. "Vector Magnetometry Using Silicon Vacancies in 4H-SiC Under Ambient Conditions,"M. Niethammer, M. Widmann, S.-Y. Lee, P. Stenberg, O. Kordina, T. Ohshima, N. T. Son, E. Janzén, J. Wrachtrup, Phys. Rev. Appl. 6 (2016) 034001-1-8.
  8. "Change in Characteristics of SiC MOSFETs by Gamma-ray Irradiation at High Temperature"Takuma Matsuda, T. Yokoseki, Satoshi Mitomo, Koichi Murata, Takahiro Makino, Hiroshi Abe, Akinori Takeyama, Shinobu Onoda, Yuki Tanaka, Mikio Kandori, Toru Yoshie, Yasuto Hijikata, Takeshi Oshima Materials Science Forum, 858 (2016) 860-863.
  9. "Gamma-ray irradiation response of the motor-driver circuit with SiC MOSFETs,"Y. Kobayashi, T. Yokozeki, Takuma Matsuda, Satoshi Mitomo, Koichi Murata, M. Hachisuka, Y. Kaneko, Takahiro Makino, Akinori Takeyama, Shinobu Onoda, Takeshi Oshima, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata Materials Science Forum, 858, ('2016) 868-871.
  10. "Investigation of electrically-active deep levels in single-crystalline diamond by particle-induced charge transient spectroscopy,"W. Kada, Y. Kambayashi, Yushi Ando, Shinobu Onoda, H. Umezawa, Y. Mokuno, S. Shikata, Takahiro Makino, M. Koka, O. Hanaizumi, Tomihiro Kamiya, Takeshi Oshima Nuclear Instruments and Methods in Physics Research B, 372, (2016) 151-155.
  11. "Radiation Response of Silicon Carbide Metal–Oxide–Semiconductor Transistors in High Dose Region,"T. Ohshima, T. Yokoseki, K. Murata, T. Matsuda, S. Mitomo, H. Abe, T. Makino, S. Onoda, Y. Hijikata, Y. Tanaka, M. Kandori, S. Okubo, T. Yoshie, Jpn. J. Appl. Phys. 55 (2016) 01AD01-1-4.
  12. "Spectral Response, Carrier Lifetime, and Photocurrents of SiC Photocathodes,"M. Kato, K. Miyake, T. Yasuda, M. Ichimura, T. Hatayama, T. Ohshima, Jpn. J. Appl. Phys. 55 (2016) 01AC02-1-4.
  13. "Activation and Control of Visible Single Defects in 4H-, 6H-, and 3C-SiC by Oxidation,"A. Lohrmann, S. Castelletto, J. R. Klein, T. Ohshima, M. Bosi, M. Negri, D. W. M. Lau, B. C. Gibson, S. Prawer, J. C. McCallum, B. C. Johnson, Appl. Phys. Lett. 108 (2016) 021107-1-4.
  14. "Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots,"S.-i. Sato, K. J. Schmieder, S. M. Hubbard, D. V. Forbes, J. H. Warner, T. Ohshima, R. J. Walters, J. Appl. Phys. 119 (2016) 175702-1-8.
  15. "Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes,"T. Makino, S. Onoda, N. Hoshino, H. Tsuchida, and T. Ohshima, Mater. Sci. Forum 858 (2016) 753-756.

- 2015 - (平成27年)

  1. "Radiation Hardness of n-type SiC Schottky Barrier Diodes Irradiated with MeV He Ion Microbeam,"Z. Pastuovic, I. Capan, D. D. Cohen, J. Forneris, N. Iwamoto, T. Ohshima, R. Siegele, N. Hoshino, H. Tsuchida, Nucl. Instrum. Meth. B 348 (2015) 233–239.
  2. "Development of Diagnostic Method for Deep Levels in Semiconductors using Charge Induced by Heavy Ion Microbeams,"W. Kada, Y. Kambayashi, N. Iwamoto, S. Onoda, T. Makino, M. Koka, T. Kamiya, N. Hoshino, H. Tsuchida, K. Kojima, O. Hanaizumi, T. Ohshima, Nucl. Instrum. Meth. B 348 (2015) 240–245.
  3. "Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes,"T. Makino, M. Deki, S. Onoda, N. Hoshino, H. Tsuchida, and T. Ohshima, Mater. Sci. Forum 821-823 (2015) 575-578.
  4. "Instability of Critical Electric Field in Gate Oxide Film of Heavy Ion Irradiated SiC MOSFETs,"M. Deki, T. Makino, K. Kojima, T. Tomita, and T. Ohshima, Mater. Sci. Forum 821-823 (2015) 673-676.
  5. "Recovery of the Electrical Characteristics of SiC MOSFETs Irradiated with Gamma-rays by Thermal Treatments,"T. Yokoseki, H. Abe, T. Makino, S. Onoda, Y. Tanaka, M. Kandori, T. Yoshie, Y. Hijikata, and T. Ohshima, Mater. Sci. Forum 821-823 (2015) 705-708.
  6. "Coherent Control of Single Spins in Silicon Carbide at Room Temperature,"M. Widmann, S. Y. Lee, T. Rendler, N. T. Son, H. Fedder, S. Paik, L. P. Yang, N. Zhao, S. Yang, I. Booker, A. Denisenko, M. Jamali, S. A. Momenzadeh, I. Gerhardt, T. Ohshima, A. Gali, E. Janzén, J. Wrachtrup, Nature Materials 14 (2015) 164–168 .
  7. "Isolated Electron Spins in Silicon Carbide with Millisecond Coherence Times,"D. J. Christle, A. L. Falk, P. Andrich, P. V. Klimov, J. U. Hassan, N. T. Son, E. Janzén, T. Ohshima, D. D. Awschalom, Nature Materials 14 (2015) 160–163.
  8. "Nanodiamond in Tellurite Glass Part II: Practical Nanodiamond-Doped Fibers,"Y. Ruan, H. Ji, B. C. Johnson, T. Ohshima, A. D. Greentree, B. C. Gibson, T. M. Monro, H. Ebendorff-Heidepriem, Optical Materials Express 5 (2015) 73-87.
  9. "High Temperature Annealing Effects on Deep-Level Defects in a High Purity Semiinsulating 4H-SiC substrate,"N. Iwamoto, A. Azarov, T. Ohshima, A. M. M. Moe, B. G. Svensson, J. Appl. Phys. 118 (2015) 045705-1-8.
  10. "Single-Photon Emitting Diode in Silicon Carbide,"A. Lohrmann, N. Iwamoto, Z. Bodrog, S. Castelletto, T. Ohshima, T. J. Karle, A. Gali, S. Prawer, J. C. McCallum, B. C. Johnson, Nature Communications 6 (2015) 7781-1-7.
  11. "Atom–Photon Coupling from Nitrogen-vacancy Centres Embedded in Tellurite Microspheres,"Y. Ruan, B. C. Gibson, D. W. M. Lau, A. D. Greentree, H. Ji, H. Ebendorff-Heidepriem, B. C. Johnson, T. Ohshima, T. M. Monro, Scientific Reports 5 (2015) 11486-1-7.
  12. "Fluorescence Polarization Switching from a Single Silicon Vacancy Colour Centre in Diamond,"Y. Liu, G. Chen, Y. Rong, L. P. McGuinness, F. Jelezko, S. Tamura, T. Tanii, T. Teraji, S. Onoda, T. Ohshima, J. Isoya, T. Shinada, E. Wu, H. Zeng, Scientific Reports 5 (2015) pp.12244-1-9.
  13. "Homoepitaxial Diamond Film Growth: High Purity, High Crystalline Quality, Isotopic Enrichment, and Single Color Center Formation,"
    T. Teraji, T. Yamamoto, K. Watanabe, Y. Koide, J. Isoya, S. Onoda, T. Ohshima, L. J. Rogers, F. Jelezko, P. Neumann, J. Wrachtrup, S. Koizumi, Phys. Status Solidi A 212 (2015) 2365–2384.
  14. "New Application of NV Centers in CVD Diamonds as a Fluorescent Nuclear Track Detector,"S. Onoda, M. Haruyama, T. Teraji, J. Isoya, W. Kada, O. Hanaizumi, T. Ohshima, Phys. Status Solidi A 212 (2015) 2641–2644.
  15. "Subpicotesla Diamond Magnetometry,"T. Wolf, P. Neumann, K. Nakamura, H. Sumiya, T. Ohshima, J. Isoya, J. Wrachtrup,"Phys. Rev. X 5 (2015) 041001-1-10.
  16. "Single Spin Optically Detected Magnetic Resonance with 60–90 GHz (E-Band) Microwave Resonators,"N. Aslam, M. Pfender, R. Stöhr, P. Neumann, M. Scheffler, H. Sumiya, H. Abe, S. Onoda, T. Ohshima, J. Isoya, J. Wrachtrup, Rev. Sci. Instrum. 86 (2015) 064704-1-8.
  17. "Singlet Levels of the NV-Centre in Diamond,"L. J. Rogers, M. W. Doherty, M. S. J. Barson, S. Onoda, T. Ohshima, N. B. Manson,
    New J. Phys. 17 (2015) pp.013048-1-12.
  18. "Swelling of Radiation-Cured Polymer Precursor Powder for Silicon Carbide by Pyrolysis,"A. Takeyama, A. Idesaki, M. Sugimoto, M. Yoshikawa, J. Asian Ceramic Societies 3 (2015) 402-406.
  19. "In-Situ Monitoring of Ion-Beam Luminescence of Si-O-C(-H) Ceramics under Proton-Beam Irradiation,"M. Narisawa, M. Koka, A. Takeyama, M. Sugimoto, A. Idesaki, T. Satoh, H. Hokazono, T. Kawai, A. Iwase, J. Ceramic Soc. Jpn. 123 (2015) 805-808.
  20. "Energy Loss Process Analysis for Radiation Degradation and Immediate Recovery of Amorphous Silicon Alloy Solar Cells,"S.-i. Sato, K. Beernink, T. Ohshima, Jpn. J. Appl. Phys. 54 (2015) 061401-1-6.
  21. "Investigation of the Silicon Vacancy Color Center for Quantum Key Distribution,"Y. Liu, P. Siyushev, Y. Rong, B. Wu, L. P. McGuinness, F. Jelezko, S. Tamura, T. Tanii, T. Teraji, S. Onoda, T. Ohshima, J. Isoya, T. Shinada, H. Zeng, E Wu, Optics Express 23 (2015) 32961-32967.
  22. "Local and Bulk 13C Hyperpolarization in Nitrogen-Vacancy-Centred Diamonds at Variable Fields and Orientations,"G. A. Alvarez, C. O. Bretschneider, R. Fischer, P. London, H. Kanda, S. Onoda, J. Isoya, D. Gershoni, L. Frydman, Nature Communications, 6:8456, DOI: 10.1038/ncomms9456, (2015).
  23. "Storage and Retrieval of Microwave Fields at the Single-Photon Level in a Spin Ensemble,"C. Grezes, B. Julsgaard, Y. Kubo, W. L. Ma, M. Stern, A. Bienfait, K. Nakamura, J. Isoya, S. Onoda, T. Ohshima, V. Jacques, D. Vion, D. Esteve, R. B. Liu, K. Mølmer, P. Bertet,
    Phys. Rev. A 92 (2015) 020301(R)-1-5.

- 2014 - (平成26年)

  1. "Continuous Observation of Polarization Effects in Thin SC-CVD Diamond Detector Designed for Heavy Ion Microbeam Measurement,"
    W. Kada, N. Iwamoto, T. Satoh, S. Onoda, V. Grilj, N. Skukan, M. Koka, T. Ohshima, M. Jakšic, T. Kamiya, Nucl. Instrum. Meth. B 331 (2014) 113–116.
  2. "Charge Collection Characteristics of A Super-Thin Diamond Membrane Detector Measured with High-Energy Heavy Ions,"N. Iwamoto, T. Makino, W. Kada, N. Skukan, M. Pomorski, V. Grilj, M. Jakšić, S. Onoda, T. Ohshima, T. Kamiya, IEEE Trans. Nucl. Sci. 61 (2014) 3732-3738.
  3. "Observation of Deep Levels and Their Hole Capture Behavior in p-type 4H-SiC Epilayers with and without Electron Irradiation,"M. Kato, K. Yoshihara, M. Ichimura, T. Hatayama, T. Ohshima, Jpn. J. of Appl. Phy. 53 (2014) 04EP09-1-5.
  4. "Radiation-Induced Currents in 4H-SiC Dosimeters for Real-Time Gamma-Ray Dose Rate Monitoring,"N. Fujita, N. Iwamoto, S. Onoda, T. Makino, T. Ohshima, Mater. Sci. Forum 778-780 (2014) 1042-1045.
  5. "Defect Levels in High Purity Semi-Insulating 4H-SiC Studied by Alpha Particle Induced Charge Transient Spectroscopy,"N. Iwamoto, S. Onoda, N. Fujita, T. Makino, T. Ohshima, Mater. Sci. Forum 778-780 (2014) 289-292.
  6. "Single Event Gate Rupture in SiC MOS Capacitors with Different Gate Oxide Thicknesses,"M. Deki, T. Makino, K. Kojima, T. Tomita, T. Ohshima, Mater. Sci. Forum 778-780 (2014) 440-443.
  7. "Impact of Carrier Lifetime on Efficiency of Photolytic Hydrogen Generation by p-type SiC,"K. Miyake, T. Yasuda, M. Kato, M. Ichimura, T. Hatayama, T. Ohshima, Mater. Sci. Forum 778-780 (2014) 503-506.
  8. "Temperature Dependence of Electric Conductivities in Femtosecond Laser Modified Areas in Silicon Carbide,"M. Deki, T. Oka, S. Takayoshi, Y. Naoi, T. Makino, T. Ohshima, T. Tomita, Mater. Sci. Forum 778-780 (2014) 661-664.
  9. "Annealing of Electron Irradiated, Thick, Ultrapure 4H SiC between 1100 oC and 1500 oC and Measurements of Lifetime and Photoluminescence,"W.M. Klahold, R.P. Devaty, W.J. Choyke, K. Kawahara, T. Kimoto, T. Ohshima, Mater. Sci. Forum 778-780 (2014) 273-276.
  10. "Identification of Structures of the Deep Levels in 4H-SiC,"H. Nakane, M. Kato, M. Ichimura, T. Ohshima, Materi. Sci. Forum 778-780 (2014) 277-280.
  11. "A Silicon Carbide Room-Temperature Single-Photon Source,"S. Castelletto, B. C. Johnson, V. Ivády, N. Stavrias, T. Umeda, A. Gali, T. Ohshima, Nature Materials 13 (2014) 151-156.
  12. "Linear Energy Transfer Dependence of Single Event Gate Rupture in SiC MOS Capacitors,"M. Deki, T. Makino, N. Iwamoto, S. Onoda, K. Kojima, T. Tomita, T. Ohshima, Nucl. Instrum. Meth. B 319 (2014) 75-78.
  13. "Proton Irradiation Enhancement of Low-Field Negative Magnetoresistance Sensitivity of AlGaN/GaN-Based Magnetic Sensor at Cryogenic Temperature,"A. Abderrahmane, P. J. Ko, H. Okada, S. –i. Sato, T. Ohshima, A. Sandhu, IEEE Electron Device Lett. 35 (2014) 1130-1132.
  14. "High Proton Radiation Tolerance of InAsSb Quantum-Well-Based micro-Hall Sensors,"A. Abderrahmane, P. J. Ko, H. Okada, S.-i. Sato, T. Ohshima, I. Shibasaki, A. Sandhu, IEEE Electron Device Lett. 35 (2014) 1305-1307.
  15. "Influence of Heavy Ion Irradiation on Perpendicular-Anisotropy CoFeB-MgO Magnetic Tunnel Junctions,"D. Kobayashi, Y. Kakehashi, K. Hirose, S. Onoda, T. Makino, T. Ohshima, S. Ikeda, M. Yamanouchi, H. Sato, E. C. Enobio, T. Endoh, H. Ohno, IEEE Trans. Nucl. Sci. 61 (2014) 1710-1716.
  16. "Quantum Well Solar Cells for Space: The Impact of Carrier Removal on End-of-Life Device Performance,"R. Hoheisel, M. Gonzalez, M. P. Lumb, D. A. Scheiman, S. R. Messenger, C. G. Bailey, J. Lorentzen, T. Tibbits, M. Imaizumi, T. Ohshima, S.-i. Sato, P. P. Jenkins, R. J. Walters, IEEE J. Photovolt. 4 (2014) 253-259.
  17. "Partial Recovery of the Magnetoelectrical Properties of AlGaN/GaN-Based Micro-Hall Sensors Irradiated with Protons,"A. Abderrahmane, T. Tashiro, H. Takahashi, P. J. Ko, H. Okada, S. Sato, T. Ohshima, A. Sandhu, Appl. Phys. Lett. 104 (2014) 023508-1-4.
  18. "Effect of Annealing on Proton Irradiated AlGaN/GaN Based Micro-Hall Sensors,"A. Abderrahmane, H. Takahashi, T. Tashiro, P. J. Ko, H. Okada, S. Sato, T. Ohshima, A. Sandhu, AIP Conf. Proc. 1585 (2014) 123-127.
  19. "Reversible Changes in Temperature Dependence of Electric Conductivity of Hydrogenated Amorphous Silicon Caused by Proton Irradiation," S.-i. Sato,T. Ohshima, J. Non-Crystalline Solids, 392-393 (2014) 11-18.
  20. "Multimode Storage and Retrieval of Microwave Fields in a Spin Ensemble," C. Grezes, B. Julsgaard, Y. Kubo, M. Stern, T. Umeda, J. Isoya, H. Smuiya, H. Abe, S. Onoda, T. Ohshima, V. Jacques, J. Esteve, D. Vion, D. Esteve, K. Moelmer, P. Bertet, Physical Review X, 4 (2014) 021049-1-9.
  21. "Array of bright silicon-vacancy centers in diamond fabricated by low-energy focused ion beam implantation,"S. Tamura, G. Koike, A. Komatsubara, T. Teraji, S. Onoda, L. P. McGuinness, L. Rogers, B. Naydenov, E. Wu, L. Yan, F. Jelezko, T. Ohshima, J. Isoya, T. Shinada, T. Tanii, Applied Physics Express, 7 (2014) 115201-1-4.
  22. "Room Temperature Quantum Emission from Cubic Silicon Carbide Nanoparticles,"S. Castelletto, B. C. Johnson, C. Zachreson, D. Beke I. Balogh, T. Ohshima, I Aharonovich, A. Gali, ACS Nano 8 (2014) 7938-7947.
  23. "Hydrogen at Zinc Vacancy of ZnO: An EPR and ESEEM Study,"N. T. Son, J. Isoya, I. G. Ivanov, T. Ohshima, E. Janzén, AIP Conference Proceedings 1583 (2014) 341-344.
  24. "Isotopic Identification of Engineered Nitrogen-Vacancy Spin Qubits in Ultrapure Diamond,"T. Yamamoto, S. Onoda, T. Ohshima, T. Teraji, K. Watanabe, S. Koizumi, T. Umeda, L. P. McGuinness, C. Muller, B. Naydenov, F. Dolde, H. Fedder, J. Honert, M. L. Markham, D. J. Twitchen, J. Wrachtrup, F. Jelezko, J. Isoya, Phys. Rev. B 90 (2014) 081117(R)-1-6.
  25. "In Vivo Imaging and Tracking of Individual Nanodiamonds in Drosophila Melanogaster Embryos,"D. A. Simpson, A. J. Thompson, M. Kowarsky, N. F. Zeeshan, M. S. J. Barson, L. T. Hall, Y. Yan, S. Kaufmann, B. C. Johnson, T. Ohshima, F. Caruso, R. E. Scholten, R. B. Saint, M. J. Murray, L. C. L. Hollenberg, Biomedical Optics Express, 5 (2014) 1250-1261.
  26. "Quantum Error Correction in a Solid-State Hybrid Spin Register,"G. Waldherr, Y. Wang, S. Zaiser, M. Jamali, T. Schulte-Herbrueggen, H. Abe, T. Ohshima, J. Isoya, P. Neumann, J. Wrachtrup, Nature 506 (2014) 204-207.

- 2013 - (平成23年)

  1. "Heavy-Ion Induced Anomalous Charge Collection From 4H-SiC Schottky Barrier Diodes,"T. Makino, M. Deki, N. Iwamoto, S. Onoda, N. Hoshino, H. Tsuchida, T. Hirao, T. Ohshima, IEEE Trans. Nucl. Sci. 60 (2013) 2647-2650.
  2. "Defect-Induced Performance Degradation of 4H-SiC Schottky Barrier Diode Particle Detectors,"N. Iwamoto, B. C. Johnson, N. Hoshino, M. Ito, H. Tsuchida, K. Kojima, T. Ohshima, J. Appl. Phys. 113 (2013) 143714.
  3. "Magnetic Resonance Identification of Hydrogen at a Zinc Vacancy in ZnO,"N. T. Son, J. Isoya, I. G Ivanov, T. Ohshima, and E. Janzen,
    J. Phys.: Condens. Matter. 25 (2013) 335804.
  4. "Effect of Proton Irradiation on 2DEG in AlGaN/GaN Heterostructures,"A. Abderrahmane, S. Koide, T. Tahara, S. Sato, T. Ohshima, H. Okada, A. Sandhu, J. Phys.: Conference Series 433 (2013) 012011
  5. "E1/E2 Traps in 6H-SiC Studied with Laplace Deep Level Transient Spectroscopy,"A. Koizumi, V. P. Markevich, N. Iwamoto, S. Sasaki, T. Ohshima, K. Kojima, T. Kimoto, K. Uchida, S. Nozaki, B. Hamilton, A. R. Peaker, Appl. Phy. Lett. 102 (2013) 032104.
  6. "Deep Levels in p-type 4H-SiC Induced by Low-Energy Electron Irradiation,"K. Yoshihara, M. Kato, M. Ichimura, T. Hatayama, T. Ohshima, Mater. Sci. Forum, 740-742 (2013) 373-376.
  7. "Radiation Response of Silicon Carbide Diodes and Transistors,"T. Ohshima, S. Onoda, N. Iwamoto, T. Makino, M. Arai, Y. Tanaka
    Physics and Technology of Silicon Carbide Devices, InTech (2012) 379-402.
  8. "Methods to Operate a Silicon Carbide Radiation Detector and to Recover its Performance,"N. Iwamoto, T. Ohshima, H. Tuchida, N. Hoshino, Japanese Patent Application 2013-01528 (2013.1.30).
  9. "Enhanced Charge Collection by Single Ion Strike in AlGaN/GaN HEMTs,"S. Onoda, A. Hasuike, Y. Nabeshima, H. Sasaki, K. Yajima, S.-I. Sato, T. Ohshima, IEEE Trans.on Nucl. Sci. 60 (2013) 4446-4450.
  10. "Heavy-Ion Induced Anomalous Charge Collection From 4H-SiC Schottky Barrier Diodes,"T. Makino, M. Deki, N. Iwamoto, S. Onoda, N. Hoshino, H. Tsuchida, T. Hirao, T. Ohshima, IEEE Trans. Nucl. Sci. 60 (2013) 2647-2650.
  11. "Heavy-Ion Induced Anomalous Charge Collection From 4H-SiC Schottky Barrier Diodes,"T. Makino, M. Deki, N. Iwamoto, S. Onoda, N. Hoshino, H. Tsuchida, T. Hirao, T. Ohshima, IEEE Trans. Nucl. Sci. 60 (2013) 218-220.
  12. "Change in the Electrical Performance of GaAs Solar Cells with InGaAs Quantum Dot Layers by Electron Irradiation,"T. Ohshima, S. Sato, M. Imaizumi, T. Nakamura, T. Sugaya, K. Matsubara, S. Niki, Solar Energy Materials & Solar Cells 108 (2013) 263–268.
  13. "Electronic Transport Transition of Hydrogenated Amorphous Silicon Irradiated with Self Ions,"S. Sato, T. Ohshima,
    IEEE Trans. Nucl. Sci. 60 (2013) 2288-2299.
  14. "Applicability of Redundant Paires of SOI Transistors for Analog Circuits Their Applications toPhase-Locked Loop Circuits,"A. Makihara, T. Yokose, Y. Tsuchiya, Y. Miyazaki, H. Abe, H. Shindo, T. Ebihara, A. Maru, K. Morikawa, S. Kuboyama, T. Tamura, IEEE Trans. Nucl. Sci. 60 (2013) 230-235.
  15. "Experimental Implementation of Assisted Quantum Adiabatic Passage in a Single Spin,"J. Zhang, J. H. Shim, I. Niemeyer, T. Taniguchi, T. Teraji, H. Abe, S. Onoda, T. Yamamoto, T. Ohshima, J. Isoya, and D. Suter, Phys. Rev. Lett. 110 (2013) 240501.
  16. "Broadband Excitation by Chirped Pulses: Application to Single Electron Spins in Diamond,"I. Niemeyer, J. H. Shim, J. Zhang, D. Suter, T. Taniguchi, T. Teraji, H. Abe, S. Onoda, T. Yamamoto, T. Ohshima, and J. Isoya, New Journal of Physics 15 (2013) 033027.
  17. "Focused Microbeam Irradiation Effects in Transmission CVD Diamond Film Detectors,"W. Kada, T. Kamiya, N. Iwamoto, S. Onoda1, V. Grilj, N. Skukan, T. Makino, M. Koka, T. Satoh, M. Jakšić, and T. Ohshima, Trans. Mat. Res. Soc. Japan 38 (2013) 279-282.
  18. "Detection of Atomic Spin Labels in a Lipid Bilayer using a Single-Spin Nanodiamond Probe,"S. Kaufmann, D. A. Simpsona, L. T. Hall, V. Perunicic, P. Senn, S. Steinert, L. P. McGuinness, B. C. Johnson, T. Ohshima, F. Caruso, J. Wrachtrup, R. E. Scholten, P. Mulvaney, L. Hollenberg, PNAS (Proceedings of the National Academy of Sciences of the United States of America) 110 (2013) 10894-10898.
  19. "Extending Spin Coherence Times of Diamond Qubits by High-Temperature Annealing,"T. Yamamoto, T. Umeda, K. Watanabe, S. Onoda, M. L. Markham, D. J. Twitchen, B. Naydenov, L. P. McGuinness, T. Teraji, S. Koizumi, F. Dolde, H. Fedder, J. Honert, J. Wrachtrup, T. Ohshima, F. Jelezko, J. Isoya, Phys. Rev. B 88 (2013) 075206-1-8.
  20. "Strongly Coupled Diamond Spin Qubits by Molecular Nitrogen Implantation,"T. Yamamoto, C. Muller, L. P. McGuinness, T. Teraji, B. Naydenov, S. Onoda, T. Ohshima, J. Wrachtrup, F. Jelezko, J. Isoya, Phys. Rev. B 88 (2013) 201201(R)-1-5.
  21. "Effects of an Ultra-Intence Laser Driven Proton Beam on the Hydriding Property of a Hydorgen Storage Alloy,"H. Abe, S. Orimo, M. Kishimoto, S. Aone, H. Uchida, H. Daido, and T. Ohshima, Nucl. Instrum. Methods B 307 (2013) 218-220.
  22. "Synergic Effects of Ion Irradiations (La, Ce) and Alkaline Pretreatment (KOH) on Hydriding Kinetic Property of a Mm-Ni Based Alloy,"
    H. Abe, S. Aone, R. Morimoto, H. Uchida, T. Ohshima, J. Alloys and Comp. 580 (2013) S219-S221.

- 2012 - (平成24年)

  1. "Excess Carrier Lifetime in p-Type 4H-SiC Epilayers with and without Low-Energy Electron Irradiation,"M. Kato, Y. Matsushita, M. Ichimura, T. Hatayama, T. Ohshima Jpn. J. Appl. Phys. 51 (2012) 0280061-2.
  2. "Spatial, LET and Range Dependence of Enhanced Charge Collection by Single Ion Strike in 4H-SiC MESFETs,"S. Onoda, T. Makino, S. Ono, S. Katakami, M. Arai,T. Ohshima IEEE Trans. Nucl. Sci. 59 (2012) 742-748.
  3. "Excess Carrier Lifetime in p-type 4H-SiC Epilayers with and without Low-Energy Electron Irradiation,"M. Kato, Y. Matsushita, M. Ichimura, T. Hatayama, T. Ohshima, Jpn. J. Appl. Phys. 51 (2012) 028006.
  4. "Local Thermal Expansion and the C-C Stretch Vibration of the Dicarbon Antisite in 4H SiC,"R.P. Devaty, Fei Yan, W.J. Choyke, A. Gali, T. Kimoto, T. Ohshima, Mater. Sci. Forum 717-720 (2012) 263-266.
  5. "Defects in an Electron-Irradiated 6H-SiC Diode Studied by Alpha Particle Induced Charge Transient Spectroscopy: Their Impact on the Degraded Charge Collection Efficiency,"N. Iwamoto, A. Koizumi, S. Onoda, T. Makino, T. Ohshima, K. Kojima, S. Koike, K. Uchida, S. Nozaki Mater. Sci. Forum 717-720 (2012) 267-270.
  6. "Electrically Detected Magnetic Resonance (EDMR) Studies of SiC-SiO2 Interfaces,"Umeda, R. Kosugi, K. Fukuda, N. Morishita, T. Oshima, K. Esaki, J. Isoya, Mater. Sci. Forum 717-720 (2012) 427-432.
  7. "Peak Degradation of Heavy-Ion Induced Transient Currents in 6H-SiC MOS Capacitor,"T. Makino, N. Iwamoto, S. Onoda, T. Ohshima, K. Kojima, S. Nozaki Mater. Sci. Forum 717-720, (2012) 469-472.
  8. "Anharmonic Vibrations of the Dicarbon Antisite Defect in 4H-SiC,"F. Yan, R. P. Devaty, W. J. Choyke, A. Gali, T. Kimoto, T. Ohshima, G. Pensl Appl. Phys. Lett. 100 (2012) 132107.
  9. "Capacitance Transient Study of a Bistable Deep Level in e−-Irradiated n-type 4H–SiC,"F. C. Beyer, C. G. Hemmingsson, H. Pedersen, A. Henry, J. Isoya, N. Morishita, T. Ohshima, E. Janzen, J. Phys. D: Appl. Phys. 45 (2012) 455301.
  10. "Negative-U System of Carbon Vacancy in 4H-SiC,"N. T. Son, X. T. Trinh, L. S. Løvlie, B. G. Svensson, K. Kawahara, J. Suda, T. Kimoto, T. Umeda, J. Isoya, T. Makino, T. Ohshima, E. Janzen, Phys. Rev. Lett. 109 (2012) 187603.
  11. "Robust Hall Effect Magnetic Field Sensors for Operation at High Temperatures and in Harsh Radiation Environments,"A. Abderrahmane , S. Koide, S. Sato , T. Ohshima, A. Sandhu, H. Okada, IEEE Trans. Mag. 48 (2012) 4421-4423.
  12. "Effects of Proton Irradiation on the Magnetoelectric Properties of 2DEG AlGaN/GaN Micro-Hall Sensors,"H. Okada, A. Abderrahmane, S. Koide, H. Takahashi, S. Sato, T. Ohshima, A. Sandhu, J. Phys.: Conference Series 352 (2012) 012010.
  13. "Temporal Electric Conductivity Variations of Hydrogenated Amorphous Silicon due to High Energy Protons,"S. Sato, H. Sai, T. Ohshima, M. Imaizumi, K. Shimazaki, M. Kondo, J. Non-Cryst. Solids 358 (2012) 2039–2043.
  14. "Anomalous Enhancement in Radiation Induced Conductivity of Hydrogenated Amorphous Silicon Semiconductors,"S. Sato, H. Sai, T. Ohshima, M. Imaizumi, K. Shimazaki, M. Kondo, Nucl. Instrum. Methods B 286 (2012) 29-34.
  15. "Electric Properties of Undoped Hydrogenated Amorphous Silicon Semiconductors Irradiated with Self-Ions,"S. Sato, H. Sai, T. Ohshima, M. Imaizumi, K. Shimazaki, M. Kondo, Nucl. Instrum. Methods B 285 (2012) 107-111.
  16. "Difference of Soft Error Rates in SOI SRAM Induced by Various High Energy Ion Species,"S. Abo, N. Masuda, F. Wakaya, T. Lohner, S. Onoda, T. Makino, T. Hirao, T. Ohshima, T. Iwamatsu, H. Oda, M. Takai, Nucl. Instrum. Method Phys. Res. B 273 (2012) 262-265.
  17. "Heavy-Ion Induce Current in MOS Structures and Its Total Dose Effects,"Y. Takahashi, T. Hirao, S. Onoda, IEICE Trans. Electr. J95-C (2012) 196-203 (in Japanese).
  18. "Dopant Effects on Solid Phase Epitaxy in Silicon and Germanium,"B. C. Johnson, T. Ohshima, J. C. McCallum, J. Appl. Phys. 111 (2012) 034906-1-6.
  19. "Electron Spin Resonance Detected by a Superconducting Qubit,"Y. Kubo, I. Diniz, C. Grezes, T. Umeda, J. Isoya, H. Sumiya, T. Yamamoto, H. Abe, S. Onoda, T. Ohshima, V. Jacques, A. Dreau, J.-F. Roch, A. Auffeves, D. Vion, D. Esteve, P. Berte, Phys. Rev. B 86 (2012) 064514.
  20. "Diamonds Utilized in the Development of Single Ion Detector with High Spatial Resolution,"S. Onoda, T. Yamamoto, T. Ohshima, J. Isoya, T. Teraji, K. Watanabe, Trans. Mat. Res. Soc. Japan 37 (2012) 241- 244.

- 2011- (平成23年)

  1. "Defects at Nitrogen Site in Electron-Irradiated AlN,"N. T. Son, A. Gali, Á. Szabó, M. Bickermann, T. Ohshima, J. Isoya, E. Janzén,Appl. Phys. Lett. 98 (2011) 242116-1-3.
  2. "Enhancement of Local Electrical Conductivities in SiC by Femtosecond Laser Modification,"M. Deki, T. Ito, M. Yamamoto, T. Tomita, S. Matsuo, S. Hashimoto, T. Kitada, T. Isu, S. Onoda, T. Ohshima,Appl. Phys. Lett. 98 (2011) 133104-1-3.
  3. "Reduction in Majority-Carrier Concentration in Lightly-Doped 4H-SiC Epilayers by Electron Irradiation,"H. Matsuura, H. Yanagisawa, K. Nishino, T. Nojiri, S. Onoda, T. Ohshima,Materials Science Forum 679-680 (2011) 181-184.
  4. "Compensation-Dependent Carrier Transport of Al-Doped p-Type 4H-SiC,"A. Koizumi, N. Iwamoto, S. Onoda, T. Ohshima, T. Kimoto, K. Uchida, S. Nozaki,Materials Science Forum 679-680 (2011) 201-204.
  5. "Using Intrinsic Defect Spectra in 4H SiC as Imbedded Thermometers in the Temperature Range from 100 oC to 1500 oC,"F. Yan, A. Espenlaub, R. P. Devaty, T. Ohshima, W. J. Choyke Materials Science Forum 679-680 (2011) 237-240.
  6. "Observation of Bistable Defects in Electron Irradiated n-type 4H-SiC,"F. C. Beyer, C. Hemmingsson, H. Pedersen, A. Henry, J. Isoya, N. Morishita, T. Ohshima, E. Janzen, Materials Science Forum 679-680 (2011) 249-252.
  7. "Oxygen Ion Induced Charge in SiC MOS Capacitors Irradiated with Gamma-rays,"T. Ohshima, N. Iwamoto, S. Onoda, T. Makino, S. Nozaki, K. Kojima, Materials Science Forum 679-680 (2011) 370-373.
  8. "Electrically Detected ESR Study of Interface Defects in 4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors,"T. Umeda, K. Esaki, R. Kosugi, K. Fukuda, N. Morishita, T. Ohshima, J. Isoya, Materials Science Forum 679-680 (2011) 362-365.
  9. "Transient Analysis of an Extended Drift Region in a 6H-SiC Diode Formed by a Single Alpha Particle Strike and Its Contribution to the Increased Charge Collection,"N. Iwamoto, S. Onoda, T. Makino, T. Ohshima, K. Kojima, A. Koizumi, K. Uchida, S. Nozaki, IEEE Trans Nucl. Sci. 58 (2011) 305-313.
  10. "Annealing Behavior of the EB-Centers and M-Center in Low-Energy Electron Irradiated n-type 4H-SiC,"F. C. Beyer, C. Hemmingsson, H. Pedersen, A. Henry, E. Janzen, J. Isoya, N. Morishita, T. Ohshima, J. Appl. Phys. 109 (2011) 103703-1-6.
  11. "Reduction of Electron Concentration in Lightly N-Doped n-Type 4H-SiC Epilayers by 200 keV Electron Irradiation,"H. Matsuura, H. Yanagisawa, K. Nishino, T. Nojiri, Y. Myojin, Y. Matsuyama, S. Onoda, T. Ohshima The Open Applied Physics Journal, 4 (2011) 37-40.
  12. "Refreshable Decrease In Peak Height Of Ion Beam Induced Transient Current From Silicon Carbide Metal-Oxide-Semiconductor Capacitors,"T. Ohshima, N. Iwamoto, S. Onoda, T. Makino, M. Deki, S. Nozaki, AIP conference proceedings 1336 (2011) 660-664.
  13. "Behavior of Nitrogen Atoms in SiC-SiO2 Interfaces Studied by Electrically Detected Magnetic Resonance,"T. Umeda, K. Esaki, R. Kosugi, K. Fukuda, T. Ohshima, N. Morishita, J. Isoya, Appl. Phys. Lett. 99 (2011) 1421051-3.
  14. "Charge Generated in 6H-SiC n+p Diodes by MeV Range Heavy Ions,"T. Ohshima, N. Iwamoto, S. Onoda, G. Wagner, H. Itoh, K. Kawano,
    Surface & Coatings Technology 206 (2011) 864-868.
  15. "Single-Alpha-Particle-Induced Charge Transient Spectroscopy of the 6H-SiC p+n Diode Irradiated with High-Energy Electrons,"N. Iwamoto, A. Koizumi, S. Onoda, T. Makino, T. Ohshima, K. Kojima, S. Koike, K. Uchida, S. Nozaki, IEEE Trans Nucl. Sci. 58 (2011) 3328-3332.
  16. "First Flight Demonstration of Film-Laminated InGaP/GaAs and CIGS Thin-Film Solar Cells by JAXA’s Small Satellite in LEO,"C. Morioka, K. Shimazaki, S. Kawakita, M. Imaizumi, H. Yamaguchi1, T. Takamoto, S. Sato, T. Ohshima, Y. Nakamura, K. Hirako, M.Takahashi,
    Progress in Photovoltaics: Research and Applications 19 (2011) 825-833.
  17. "Temporal Donor Generation in Undoped Hydrogenated Amorphous Silicon Induced by Swift Proton Bombardment,"S. Sato, H. Sai, T. Ohshima, M. Imaizumi, K. Shimazaki, M. Kondo Appl. Phys. Express 4 (2011) 061401-1-3.
  18. "Effect of a Body-Tie Structure Fabricated by Partial Trench Isolation on the Suppression of Floating Body Effect Induced Soft Errors in SOI SRAM Investigated using Nuclear Probes,"S. Abo, N. Masuda, F. Wakaya, S. Onoda, T. Makino, T. Hirao, T. Ohshima, T. Iwamatsu, H. Oda, M. Takai Nucl. Instrum. Method Phys. Res. B 269 (2011) 2360-2363.
  19. "60Co Gamma–ray Irradiation Effects on Pentacene-based Organic Thinfilm Transistors,"L. Cai, T. Hirao, H. Yano, Z. Duan, H. kayanagi, H. Ueki, T. Ohshima, Y. Nishioka, Materials Science Forum 687 (2011) 576-579.
  20. "Characteristics of Gamma–Ray Irradiated Pentacene Organic Thin Film Field Effect Transistors,"H. Yano, L. Cai, T. Hirao, Z. Duan, Y. Takayanagi, H. Ohuchi, H. Ueki, T. Ohshima, Y. Nishioka, Advanced Materials Research 306-307 (2011) 185-192.
  21. "Characterization of LiNbO3 Single-Crystal Substrates Irradiated with Electrons,"H. Miyazaki, J. Morimoto, K. Toda, S. Onoda, T. Ohshima, Jpn. J. Appl. Phys. 50 (2011) 07HB07-1-4.
  22. "Hybrid Quantum Circuit with a Superconducting Qubit Coupled to a Spin Ensemble,"Y. Kubo, C. Grezes, A. Dewes, T. Umeda, J. Isoya, H. Sumiya, N. Morishita, H. Abe, S. Onoda, T. Ohshima, V. Jacques, A. Dréau, J. –F. Roch, I. Diniz, A. Auffeves, D. Vion, D. Esteve, P. Bertet, Phys. Rev. Lett. 107 (2011) 22501-1-5.

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