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高崎量子応用研究所

Research Theme - Semiconductor Radiation Effects Research

掲載日:2018年12月26日更新
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Research Theme

1.Defect Engineering of Wide Bandgap Semiconductors

Single Photon Source (SPS) has a unique characteristics that it emits one photon when it excited by one photon. We can realize quantum computers which have extremely higher calculation capability than current computers, very bright photonic devices of which size is well controlled in nano meter level and high sensitive magnetic senseors if we can control spin and luminescence of defects acting as SPS. Defect centers which act as SPS can be created in wide bandgap semiconductors such as diamond and Silicon Carbide (SiC). We are developing creation techniques of negatively charged nitrogen vacancy (NV-) centers which act as SPS in diamond using ion and electron beams. We also characterize spin and luminescence of NV- centers. In addition, we create defects in SiC using ion and electron beams and study such defects from the point of vies of SPS.

2.Super Radiation Hardnened Electronics for Applications of Nulear and Accelerator Facilities

Silicon Carbide (SiC) is regarded as a promising candidate for radiation resistant devices. For applying SiC to such radiation resistant devices, it is important to understand radiation response of their electrical characteristics. So, we study the effects of radiations on SiC devices.

3.Radiation Effects on Electronic Devices and Solar Cells for Space Applications

The electrical characteristics of devices such as LSI and Solar cells used in space are affected by incidence of high energetic particles such as heavy ions, protons and electrons. Thus, the performance of such devices is degraded and/or the malfunction occurs. Therefore, the reliability and/or lifetime of electronic devices in radiation environments have to be clarified before launch. Also, the development of electronic devices with high radiation resistance is important. So, we study radiation effects in electronic devices for space applications.


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