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高崎量子応用研究所

プロジェクト陽電子ナノ物性の業績一覧

掲載日:2019年5月21日更新
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スピン偏極陽電子消滅法によるスピン物性研究

2018

Spin-Polarized Positron Annihilation Measurement on Ga Vacancies in p-type GaN
M. Maekawa, S. Sakai, A. Miyashita, A. Kawasuso
e-J. Surf. Sci. Nanotech. 16(2018)347-350.

Spin polarization of graphene and h-BN on Co(0001) and Ni(111) observed by spin-polarized surface positronium spectroscopy
A. Miyashita, M. Maekawa, K. Wada, A. Kawasuso, T. Watanabe, S. Entani, and S. Sakai
Phys. Rev. B, 97(2018)195405-1-5.

2017

Vacancy-induced ferromagnetism in ZnO probed by spin-polarized positron annihilation spectroscopy
M. Maekawa, H. Abe, A. Miyashita, S. Sakai, S. Yamamoto, and A. Kawasuso
Appl. Phys. Lett., 110(2017)172402-1-5.

Vacancy-mediated ferromagnetism in Co-implanted ZnO studied using a slow positron beam
D. D. Wnag, B. Zhao, N. Qi, Z. Q. Chen and  A. Kawasuso
J. Mater. Sci, 52(2017)7067-7076.

Spin-Polarized Positron Annihilation Study on Some Ferromagnets
H. Li, M. Maekawa, A. Miyashita, A. Kawasuso
Defect and Diffusion Forum, 373(2017)65-70.

Construction of a surface positronium lifetime spectroscopy apparatus with a spin-polarized low energy positron beam
M. Maekawa, K. Wada, A. Miyashita and A. Kawasuso
J. Phys. Conf. Ser. 791(2017)021009.

2015

スピン偏極陽電子ビームの応用研究
河裾厚男
放射線と産業 139号(2015)18-22.

Effect of magnetic field on positronlifetimes of Fe, Co and Ni
H. Li, M. Maekawa, A. Kawasuso and N. Tanimura
J. Phys. Condens. Matter 27(2015)246001-1-5.

Charge-to-spin conversion and spin diffusion in Bi/Ag bilayers observed by spin-polarized positron beam
H. J. Zhang, S. Yamamoto, B. Gu, H. Li, M. Maekawa, Y. Fukaya, and A. Kawasuso
Phys. Rev. Lett. 114(2015)166602-1-5.

放射性同位体を用いたスピン偏極陽電子ビーム
河裾厚男
陽電子科学4(2015)9-22.

2014

Doppler-Broadening of Annihilation Radiation Spectroscopy under High Magnetic Field Using a Longitudinally Spin-polarized Slow Positron Beam
M. Maekawa, H. Zhang, H. Li,Y. Fukaya, A. Kawasuso
Jpn. J. Appl. Phys. Conf. Proc. 2(2014)011305-1-7.

Spin polarizations of positron beams generated using electrostatic and magnetic transportation systems with 68Ge and 22Na sources
M. Maekawa, Y. Fukaya, H. Zhang, H. Li and A. Kawasuso
J. Phys. Conf. Ser. 505 (2014) 012033(4).

Current-induced spin polarization on metal surfaces probed by spin-polarized positron beam
H. J. Zhang, S. Yamamoto, Y. Fukaya, M. Maekawa, H. Li, A. Kawasuso, T. Seki, E. Saitoh& K. Takanashi
Scientific Reports 4(2014)04844.

2013

Spin-polarized positron annihilation spectroscopy for spintronics applications
A. Kawasuso, Y. Fukaya, M. Maekawa, I. Mohizuki, and H. Zhang
J. Phys. Conf. Ser. 443(2013) 012084(4).

Current-induced spin polarization on a Pt surface : A new approach using spin-polarized positron annihilation spectroscopy
A. Kawasuso, Y. Fukaya, M. Maekawa, H. Zhang, T. Seki, T.Yoshino, E. Saitoh, K. Takanashi
J. Mag. Mag. Mater. 342(2013)139-143.

Development of spin-polarized slow positron beam using a 68Ge-68Ga positron source
M. Maekawa, Y. Fukaya, A. Yabuuchi, I. Mochizuki, A. Kawasuso
Nucl. Inst. Meth. Phys. Res. B308 (2013) 9-14.

2012

Doppler broadening of annihilation radiation measurements on 3d and 4f ferromagnets using polarized positrons
A. Kawasuso, M. Maekawa, Y. Fukaya, A. Yabuuchi and I. Mochizuki
Phys. Rev. B85 (2012)024417(6).

2011

Spin-polarized positron annihilation measurements on polycrystalline Fe, Co, Ni and Gd based on Doppler broadening of annihilation radiation
A. Kawasuso, M. Maekawa, Y. Fukaya. A. Yabuuchi and I. Mochizuki
Phys. Rev. B83 (2011)100406(R).

Development of spinpolarized positron beam using high energy proton beam
M. Maekawa, A. Kawasuso, Y. Fukaya, A. Yabuuchi
J. Phys. Conf. Ser. 262(2011)012035.

2010

Development of Spin-Polarized Positron Beam
A. Kawasuso, Y. Fukaya, M. Maekawa and A. Yabu-uchi
J. Phys. Conf. Ser. 225(2010)012028.

2008

Spin polarization of an electrostatic positron beam
A. Kawasuso and M. Maekawa
Appl. Surf. Sci. 255(2008)108-110.

ポジトロニウム生成素過程の研究

2018

Positronium formation at Si surfaces
A. Kawasuso, M. Maekawa, A. Miyashita, K. Wada, T. Kaiwa, Y. Nagashima
Phys. Rev. B, 97(2018)245303-1-8.

陽電子回折による表面物性研究

2018

Total-reflection high-energy positron diffraction (TRHEPD) for structure determination of the topmost and immediate sub-surface atomic layers
Y. Fukaya, A. Kawasuso, A. Ichimiya, and T. Hyodo
J. Phys. D: Appl. Phys., 52(2019)013002-1-19.

Observation of low-energy positron diffraction patterns with a linac-based slow-positron beam
K. Wada, T. Shirasawa, I. Mochizuki, M. Fujinami, M. Maekawa, A. Kawasuso, T. Takahashi, T. Hyodo
e-J. Surf. Sci. Nanotech. 16(2018)313-319.

2017

Research progress at the Slow Positron Facility in the Institute of Materials Structure Science, KEK
T. Hyodo, K. Wada, I. Mochizuki, M. Kimura, N. Toge, T. Shidara, Y. Fukaya, M. Maekawa, A. Kawasuso, S. Iida, K. Michishio, and Y. Nagashima
J. Phys.: Conf. Ser. 791(2017)012003.

2016

Structure determination of the rutile-TiO2(110)-(1x2) surface using total-reflection high-energy positron diffraction (TRHEPD)
I. Mochizuki, H. Ariga, Y. Fukaya, K. Wada, M. Maekawa, A. Kawasuso, T. Shidara, K. Asakura and T. Hyodo
Phys.Chem.Chem.Phys., 18(2016)7085-7092.

2014

Brightness enhancement of a linac-based intense positron beam for RHEPD
M. Maekawa, Y. Fukaya, A. Kawasuso, K. Wada, T. Hyodo
Eur. Phys. J. D 68(2014)165(6).

Total reflection high-energy positron diffraction (TRHEPD)
T. Hyodo, Y. Fukaya, M. Maekawa, I. Mochizuki, K. Wada, T. Shidara, A. Ichimiya and A. Kawasuso
J. Phys. Conf. Ser. 505 (2014) 012001(6).

Reflection high-energy positron diffraction study on the first surface layer
Y. Fukaya, M. Maekawa, I. Mochizuki, K Wada, T. Hyodo and A. Kawasuso
J. Phys. Conf. Ser. 505 (2014) 012005(6).

Total reflection high-energy positron diffraction: An ideal diffraction technique for surface analysis
Y. Fukaya, M. Maekawa, A. Kawasuso, I. Mochizuki, K. Wada, T. shidara, A. Ichimiya nd T. Hyodo
Appl. Phys. Exp. 7 (2014)056601-1-4.

2013

Structure of silicene on Ag(111) surface studied by reflection high-energy positron diffraction
Y. Fukaya, I. Mochizuki, M. Maekawa, K. Wada, T. Hyodo, I. Matsuda and A. Kawasuso
Phys. Rev. B 88(2013) 205413-1-4.

New experiment stations at KEK Slow Positron Facility
K Wada, T Hyodo, T Kosuge, Y Saito, M Ikeda, S Ohsawa, T Shidara, K Michishio, T Tachibana, H Terabe, R H Suzuki, Y Nagashima, Y Fukaya, M Maekawa, I Mochizuki and A Kawasuso
J. Phys. Conf. Ser. 443(2013)012082(6).

Reflection high-energy positron diffraction: the past 15 years and the future
Y Fukaya, M Maekawa, I Mochizuki, K Wada, T Hyodo and A Kawasuso
J. Phys. Conf. Ser. 443 (2013) 012068(6).

Atomic and Electronic Structures of Si(111)-√21×√21 Superstructure
Y. Fukaya, K. Kubo, T. Hirahara, S. Yamazaki, W. H. Choi, H. W. Yeom, A. Kawasuso, S. Hasegawa, I. Matsuda 
e-JSSN 10 (2012)310.

2012

Structural analysis of Si(111)-√21×√21-(Ag,Cs) surface by reflection high-energy positron diffraction
Y. Fukaya, I. Matsuda, R. Yukawa and A. Kawasuso
Surf. Sci. 606(2012)1918-1921.

Charge transfer and structure of K/Si(111)-2√3×2√3-B surface studied by reflection high-energy positron diffraction
Y. Fukaya, I. Mochizuki and A. Kawasuso
Phys. Rev. B86(2012)035423-1-035423-5.

Atomic configuration and phase transition of Pt-induced nanowires on a Ge(001) surface studied using scanning tunneling microscopy, reflection high-energy positron diffraction and angle-resolved photoemission spectroscopy
I. Michizuki, Y. Fukaya, A. Kawasuso, K. Yaji, A. Harasawa, I. Matsuda, K. Wada and T. Hyodo
Phys. Rev. B85(2012)245438-1-245438-6.

Atomic structure of two-dimensional binary surface alloys: Si(111)-√21×√21 superstructure
Y. Fukaya, I. Matsuda, M. Hashimotom K. Kubo, T. Hirahara, W. H. Choi, H. W. Yeom, S. Hasegawa, A. Kawasuso, A. Ichimiya
Surf. Sci. 606(2012)919-923.

Increase in the beam intensity of the linac-based slow positron beam and its application at the Slow Positron Facility, KEK
K. Wada, T. Hyodo, A. Yagishita, M. Ikeda, S. Ohsawa, T. Shidara, K. Michishio, T. Tachibana, Y. Nagashima, Y. Fukaya, M. Maekawa, A. Kawasuso
Eur. Phys. J. D66(2012)37(4).

2010

Electron compound nature in a surface atomic layer of a two-dimensional hexagonal lattice
Iwao Matsuda, F. Nakamura, K.Kubo, T. Hirahara, S. Yamazaki, W. H. Choi, H. W. Yeom, H. Narita, Y. Fukaya, M. Hashimoto, A. Kawasuso, M. Ono, Y. Hasegawa, S. Hasegawa, and K. Kobayashi
Phys. Rev. B 82 (2010)165330-1-165330-6.

Surface plasmon excitation at metal surfaces studied by reflection high-energy positron diffraction
Y. Fukaya, A. Kawasuso and A. Ichimiya
J. Phys. Conf. Ser. 225(2010)012009.

Structure and phase transition of low-dimensional metals on crystal surface studied by reflection high-energy positron difraction
Y. Fukaya, M. Hashimoto, A. Kawasuso, A. Ichimiya
J. Phys. Conf. Ser. 225(2010)012008.

Surface plasmon excitation at topmost surface in reflection high-energy positron diffraction
Y. Fukaya, A. Kawasuso and A. Ichimiya
e-J. Surf. Sci. Nanotech. 8(2010)190-193.

2009

Phase transition of In/Si(111) surface studied by reflection high-energy positron diffraction
M. Hashimoto, Y.Fukaya, A. Kawasuso and A. Ichimiya
e-J. Surf. Sci. Nanotech. 7 (2009)436-440.

Metal co-adsorption induced √21×√21 superstructure on Si(111) surface studied by reflection high-energy positron diffraction
Y. Fukaya, I. Matsuda, M. Hashimoto, H. Narita, A. Kawasuso and A. Ichimiya
e-J. Surf. Sci. Nanotech. 7 (2009)432-435.

Inelastic scattering processes in reflection high-energy positron diffraction from a Si(111)-7×7 surface
Y. Fukaya, A. Kawasuso and A. Ichimiya
Phys. Rev. B79(2009)193310-1-193310-4.

Atomic Scale Study of Surface Structures and Phase Transition with Reflection High-Energy Positron Diffraction
A. Kawasuso,Y. Fukaya, M. Hashimoto, A. Ichimiya, H. Narita and I Matsuda
Mater. Sci. For. 607(2009)94-98.

2008

Quasi-one-dimensional In atomic chains on Si(111) surface at low temperature studied by reflection high energy positron diffraction
M. Hashimoto, Y.Fukaya, A. Kawasuso and A. Ichimiya
Appl. Surf. Sci. 254(2008)7733-7736.

Surface structure and phase transition of Ge(111)-3×3-Pb studied by reflection high-energy positron diffraction
Y. Fukaya, M. Hashimoto, A. Kawasuso and A. Ichimiya
Appl. Surf. Sci. 254(2008)7827-7830.

Surface structure of Si(111)-8×2-In studied by reflection high-energy positron diffraction
Y. Fukaya, M. Hashimoto, A. Kawasuso and A. Ichimiya
Sur. Sci. 602(2008)2448-2458.

2007

Reflection high-energy positron diffraction study of surface super structures
A. Kawasuso, Y. Fukaya, M. Hashimoto and A. Ichimiya
Phys. Stat. Sol.(c)4(2007)3924-3927.

Surface Structure of In/Si(111) studied by reflection high-energy positron diffraction
M. Hashimoto, Y.Fukaya, A. Kawasuso and A. Ichimiya
Surf. Sci. 601(2007)5192-5194.

Strutural analysis of Si(111)-√21×21-(Ag,Au) surface by using reflection high-energy positron diffraction
Y.Fukaya, A. Kawasuso and A. Ichimiya
Surf. Sci. 601(2007)5187-5191.

反射高速陽電子回折
河裾厚男
表面物性工学ハンドブック第2版(2007)118:小間篤、青野正和、石橋幸治、塚田捷、常行真司、長谷川修司、八木克道、吉信淳
Reflection high-energy positron diffraction study on Si(111)-√3×√3-Ag surface
Y. Fukaya, A. Kawasuso and A. Ichimiya
Phys. Rev. B75(2007)115474-1-115474-6.

2006

反射高速陽電子回折で見たAg/Si(111)の構造と相転移
河裾厚男
基礎科学ノート vol.14 No.1(2006)10-14.

電子・陽電子回折を用いた半導体表面の原子配列の観察
一宮彪彦、河裾厚男
放射線と産業 112(2006)31-35.
Reflection high-energy positron diffraction pattern from a Si(111)-7×7 surface
K. Hayashi, A. Kawasuso and A. Ichimiya
Surf. Sci. 600(2006)4426-4429.

Structural analysis of Si(111)-√21×√21-Ag surface by reflection high-energy positron diffraction
Y. Fukaya, A. Kawasuso and A. Ichimiya
Surf. Sci. 600(2006)3141-3146.

Structural analysis of Ge(111)-3×3-Sn surface at low-temperature by reflection high-energy positron diffraction
Y. Fukaya, A. Kawasuso and A. Ichimiya
Surf. Sci. 600(2006)4086-4088.

Adsorption of oxygen on Si(001) surfaces studied by reflection high-energy positron diffraction
K. Hayashi, A. Kawasuso and A. Ichimiya
e-J. Surf. Sci. Nanotech. 4(2006) 510-513.

Order-disorder phase transition and structure of Sn/Ge(111) surface studied by reflection high-energy positron diffraction
Y. Fukaya, A. Kawasuso and A. Ichimiya
e-J. Surf. Sci. Nanotech. 4(2006)435-438.

2005

全反射陽電子回折による極表面構造の解析と物性
一宮彪彦、河裾厚男、深谷有喜、林和彦
応用物理 第74巻、第11号(2005)1467-1471.

Order-disorder phase transition of Si(111)-√3x√3-Ag surface studied by reflection high-energy positron diffraction
Y. Fukaya, A. Kawasuso and A. Ichimiya
e-J. Surf. Sci. Nanotech. 3(2005)228-232.

Observation of Si(111)-√3×√3-Ag surface at room temperature studied by reflection high-energy positron diffraction
Y. Fukaya, A. Kawasuso, K. Hayashi and A. Ichimiya
Appl. Surf. Sci. 244(2005)166-169.

Reflection high energy positron diffraction study of a Si(001) surface
K. Hayashi, Y. Fukaya, A. Kawasuso and A. Ichimiya
Appl. Surf. Sci. 244(2005)145-148.

Positron diffraction study of SiC(0001) surface
A. Kawasuso, M. Maekawa, M. Yoshikawa and A. Ichimiya
Appl. Surf. Sci. 244(2005)149-152.

2004Dynamics of adatoms of Si(111)-(7x7) surface studied by reflection high-energy positron diffraction
Y. Fukaya, A. Kawasuso, K. Hayashi and A. Ichimiya
Phys. Rev. B70(2004)245422-1-245422-6.

A coherent positron beam for reflection high-energy positron diffraction
A. Kawasuso, T. Ishimoto, M. Maekawa, Y. Fukaya, K. Hayashi and A. Ichimiya
Rev. Sci. Inst. 75(2004)4585-4588.

Kinematical and Dynamical Analyses of Reflection High Energy Positron Diffraction (RHEPD) Patterns from Si(111)7×7 Surfaces
K. Hayashi, Y. Fukaya, A. Kawasuso and A. Ichimiya
Appl. Surf. Sci. 237(2004)34-39.

Precise determination of surface Debye temperature from a Si(111)-7x7 surface by reflectrion high energy positron diffraction
Y. Fukaya, A. Kawasuso, K. Hayashi and A. Ichimiya
Appl. Surf. Sci. 237(2004)29-33.

Observation of fast positron diffraction from a Si(111)7x7 surface
A. Kawasuso, Y. Fukaya, K. Hayashi, M. Maekawa, T. Ishimoto, S. Okada and A. Ichimiya
Materials Science Forum, 445-446 (2004)385-389.

2003

Top Most Surface Studies by Total Reflection Positron Diffraction
A. Kawasuso, T. Ishimoto, Y. Fukaya, K. Hayashi and A. Ichimiya
e-J. Surf. Sci. Nanotech. 1(2003)152-157.

Si(111)-7 x 7 surface probed by reflection high-energy positron diffraction
A. Kawasuso, Y. Fukaya, K. Hayashi, M. Maeakawa, S. Okada and A. Ichimiya
Phys. Rev. B68 (2003)241313(R).

Observation of fast positron diffraction from a Si(111)7x7 surface
A. Kawasuso, Y. Fukaya, K. Hayashi, M. Maekawa, T. Ishimoto, S. Okada and A. Ichimiya
Materials Science Forum, 445-446 (2004)385-389.

反射高速陽電子回折による表面研究
河裾厚男、一宮彪彦
表面科学、24巻、3号(2003)174-180.

2002

Reflection High-Energy Positron Diffraction at Solid Surfaces by Improved Electrostatic Positron Beam
A. Kawasuso, T. Ishimoto, S. Okada, H. Itoh and A. Ichimiya
Appl. Surf. Sci. 194 (2002) 287-290.

Improvement of the electrostatic positron beam and observation system for RHEPD experiment
T. Ishimoto, A. Kawasuso, H. Itoh
Appl. Surf. Sci. 194 (2002) 43-46.

表面分析における陽電子回折技術の開発 -陽電子で見る物質最表面の構造-河裾厚男, Isotope News 3月号(2002)2-4.

2001

Reflection High-Energy Positron Diffraction: Solved and unsolved problems
A. Kawasuso, K. Kojima, M. Yoshikawa, K. Narumi, S. Okada, H. Itoh and A. Ichimiya
Materials Science Forum, 363-365(2001)445-447.

2000

Rocking curves of reflection high-energy positron diffraction from hydrogen-terminated Si(111) surfaces
A. Kawasuso, M. Yoshikawa, K. Kojima, S. Okada and A. Ichimiya
Phys. Rev. B61 (2000)2102-2106.

Development and application of reflection high-energy positron diffraction
A. Kawasuso, S. Okada and A. Ichimiya
Nuclear Instrument & Methods in Phys. Res. B 171 (2000) 219-230.

Effect of hydrogen etching on morphology of 6H SiC surface studied by reflection high-energy positron diffraction and atomic force microscopy
A. Kawasuso, K. Kojima, K. Narumi, M. Yoshikawa and H. Itoh
Appl. Phys. Lett., 76 (2000)1119-1121.

2000

1998Reflection High Energy Positron Diffraction from a Si (111) Surface
A. Kawasuso and S. Okada
Phys. Rev. Lett. 81(1998)2695-2698.


陽電子回折一宮彪彦, 河裾厚男, 放射線 第24巻 第3号(1998)29.

陽電子消滅法による材料物性研究

2015

Enhanced damage buildup in C+-implanted GaN film studied by a monoenergetic positron beam
X. F. Li, Z. Q. Chen, C. Liu, H. J. Zhang, and A. Kawasuso
J. Appl. Phys. 117(2015)085706-1-5.

2014

Defects and acceptor centers in ZnO introduced by C+-implantation
M. Jiang , X. D. Xue, Z. Q. Chen, Y. D. Liu, H. W. Liang, H. J. Zhang, A. Kawasuso
J Mater Sci. 49( (2014) )1994-1999.

2013

Positron annihilation Doppler broadening study of Xe-implanted aluminum
R.S. Yu,., M. Maekawa, A. Kawasuso, B.Y. Wang, L. Wei
Appl. Surf. Sci. 282(2013)724.

Observation of spatial distribution of vacancy defects in semiconductor by positron microscope and electron beam induced current measurement
M Maekawa and A Kawasuso
J. Phys. Conf. Ser. 443(2013)012041(4).

Suppression of vacancy aggregation by silicon-doping in low-temperature-grown GaCrN
A. Yabuuchi, M. Maekawa, A. Kawasuso, Y.-K. Zhou, S. Hasegawa, and H. Asahi
Appl. Phys. Lett. 102 (2013)142406(4 pages).

Location and size of nanoscale free-volume holes in crosslinked-polytetrafluoroethylene-based graft-type polymer electrolyte membranes determined by positron annihilation lifetime spectroscopy
S. Sawada, A. Yabuuchi, M. Maekawa, A. Kawasuso, Y. Maekawa
Rad. Phys. Chem. 87 (2013) 46-52.

2012

Study of defects in H+ ion implanted B2 type Fe-Al alloy using slow positron beam
S. Komagata, A. Kawasuso, A. Yabuuchi, M. Maekawa, C. Batchulun, K. Yasuda, R. Ishigami, K. Kume, A. Iwase and F. Hori
Physics Procedia 35(2012)75-79.

Influence of oversized elements (Hf, Zr, Ti and Nb) on the thermal stability of vacancies in type 316L stainless steels
A. Yabuuchi, M. Maekawa, A. Kawasuso
J. Nucl. Mater. 430(2012)190-193.

Positron annihilation study of 4H-SiC by Ge implanted and subsequent thermal annealing
R. S. Yu, M. Maekawa, A. Kawasuso, B. Y. Wang and L. Wei
Nucl. Inst. Meth. in Phys. Res. B270 (2012) 47-49.

Development of pulsed positron beam line with compact pulsing system
M. Maekawa and A. Kawasuso
Nucl. Inst. Meth. in Phys. Res. B270 (2012) 23-27.

2011

Microstructure of Nearly Stoichiometric ZrC Coating Layers for Advanced High Temperature Gas Cooled Reactor Fuel and Positron Annihilation Spectroscopy of Various ZrC coating layers
J. Aihara, M. Maekawa, S. Ueta, A. Kawasuso and K. Sawa
J. Am. Ceram. Soc. 94(2011)4516-4522.

Vacancy defects in a stress-corrosion-cracked Type 304 stainless steel investigated by positron annihilation spectroscopy
A. Yabuuchi, M. Maekawa, A. Kawasuso
J. Nucl. Matt.  419(2011)9-14.

Defect Structure of MBE-grown GaCrN Diluted Magnetic Semiconductor Film
A. Yabuuchi, M. Maekawa, A. Kawasuso, S. Hasegawa,, Yi-Kai Zhou and H. Asahi
J. Phys. Conf. Ser. 262(2011)012066.

Positron Microbeam Study on Vacancy Generation Caused by Stress Corrosion Crack Propagation in Austenitic Stainless Steels
A. Yabuuchi, M. Maekwa and A. Kawasuso
J. Phys. Conf. Ser. 262(2011)012067.

A study of defects in electron- and ion-irradiated ZrCuAl bulk glassy alloy using positron annihilation techniques
F. Hori, N. Onodera, Y. Fukumoto, A. Ishii, A. Iwase, A. Kawasuso, A. Yabuuchi, M. Maekawa and Y. Yokoyama
J. Phys. Conf. Ser. 262(2011)012025.

2010

Spin conversion of positronium in NiO/Al2O3 catalysts observed by coincidence Doppler broadening technique
H.J. Zhang, Z. Q. Chen, S. J. Wang, A. Kawasuso and N. Morishita
Phys. Rev. B 82 (2010)035439-10.

原子力機構における陽電子マイクロビームの生成・利用
前川雅樹、薮内敦、河裾厚男
放射線 36(2010)13-20.


Free volume in Zr-based bulk glassy alloys studied by positron annihilation techniques
A Ishii, A. Iwase Y. Yokoyama, T. J. Konno, A. Kawasuso, A Yabuuchi, M.Maekawa, and F. Hori
J. Phys. Conf. Ser. 225(2010)012020.

Free-volume structure of fluoropolymer-based radiationgrafted electrolyte membranes investigated by positron annihilation lifetime spectroscopy
S. Sawada, A. Kawasuso, M. Maekawa, A. Yabuuchi, Y. Maekawa
J. Phys. Conf. Ser. 225(2010)012048.

Coincidence Doppler broadening spectra of some single-element materials from the second to the sixth periods
A. Kawasuso, M. Maekawa and K. Betsuyaku
J. Phys. Conf. Ser. 225(2010)012027.

Characterization of the Helium Bubbles in Si Probed by a Slow Positron Beam
M. Maekawa, A. Kawasuso
J. Phys. Conf. Ser. 225(2010)012032.

Evaluation of stainless steel under tensile stress using positron microbeam
M. Maekawa, A. Yabuuchi, A. Kawasuso
J. Phys. Conf. Ser. 225(2010)012033.

2009

陽電子消滅法による材料評価
河裾厚男、前川雅樹
放射線と産業 124(2009)15-20.

TiCrV hydrogen storage alloy studied by positron annihilation spectroscopy
A. Kawasuso, H. Arashima, M. Maekawa, H. Itoh, and T. Kabutomori
J. Alloy Compd. 486(2009)278-283.

Microstructure evolution of Ge+ implanted silicon oxide thin films upon annealing treatment
R.S.Yu, M. Maekawa, A. Kawasuso. T. Sekiguchi, B.Y.Wang, X.B.Qin, Q. Z. Wang
Nucl. Inst. & Meth. In Phys. Res. B 267 (2009) 3097-3099.

Ferromagnetism and microstructure in Fe+-implanted ZnO
D. Wanga, Z.Q. Chen, F. Zhou, W. Lub, M. Maekawa, A. Kawasuso
Appl. Surf. Sci. 255 (2009) 9371-9375.

Recent findings on blistering and deuterium retention in tungsten exposed to high-fluence deuterium plasma
W.M. Shu, A. Kawasuso and T. Yamanishi
J. Nucl. Matter. 386-388 (2009) 356-359.

Vacancy Generation in Si During Solid-Liquid Transition Observed by Positron Annihilation Spectroscopy
M. Maekawa, A. Kawasuso
Jpn. J. Appl. Phys. 48(2009)030203-030205..

Application of positron microprobe for nuclear materials
M. Maekawa, A. Kawasuso, T. Hirade, Y. Miwa and A. Nishimura,
Mater. Sci. For. 607(2009)266-268.

Positron annihilation lifetime study of electrolyte membranes
S. Sawada, A. Kawasuso, M. Maekawa, A. Suzuki, T. Terai and Y. Maekawa
Mater. Sci. For. 607(2009)70-72.

Positron Lifetime Study on Degradation of TiCrV Hydrogen Storage Alloy
A. Kawasuso, H. Arashima, M. Maekawa and T. Kabutomori
Mater. Sci. For. 607(2009)122-124.

2008

Construction of a positron micro-beam in JAEA
M.Maekawa and A. Kawasuso
Appl. Surf. Sci. 255(2008)39-41.

Development and application of positron microbeam
M. Maekawa, A. Kawasuso, T. Hirade and Y. Miwa
Trans. Matter Res. Soc. Jpn. 33(2008)287-290.

Vacancy defects in electron-irradiated ZnO studied by Doppler broadening of annihilation radiation
Z.Q.Chen, K. Betsuyaku and A. Kawasuso
Phys. Rev. B77(2008)113204-113207.

2007

Characterization of swift-ion induced defects in FeRh alloy by using positron beam technique
N. Hori, M. Fukuzumi, A. Kawasuso, Y. Chimi, N. Ishikawa and A. Iwase
Phys. Stat. Sol. (c)4(2007)3530-3533.

Ion species dependence of the implantation-induced defects in ZnO studied by a slow positron beam
Z. Q. Chen, M. Maekawa, A. Kawasuso, H. Naramoto
Phys. Stat. Sol. (c)4(2007)3646-3649.

Positron microscopic analysis of crack failure in stainless steels
R. Yu, M. Maekawa, Y. Miwa, T. Hirade, A. Nishimura and A. Kawasuso
Phys. Stat. Sol. (c)4(2007)3577-3580.

Design of a positron microbeam using magnetic lenses
M. Maekawa, R. Yu and A. Kawasuso
Phys. Stat. Sol. (c)4(2007)4016-4019.

Characterization of ion beam-induced SiC-OI structures probed by positron annihilation spectroscopy
M. Maekawa, R. Yu and A. Kawasuso
Phys. Stat. Sol. (c)4(2007)3680-3683.

Thermal evolution of defects in as-grown and electron-irradiated ZnO studied by positron annihilation
Z. Q. Chen, S. J. Wang, M. Maekawa, A. Kawasuso, H. Naramoto, X. L. Yuan, and T. Sekiguchi
Phys. Rev. B75(2007)245206-245214.

Microstructure dependence of deuterium retention and blistering in the near-surface region of tungsten exposed to high flux deuterium plasmas of tens of 38eV
W. M. Shu, A. Kawasuso, Y. Miwa, E. Wakai, G.-N. Luo, d and T. Yamanishi
Physica Scipta T128(2007)96-99.

2006

Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam
Z. Q. Chen, A. Kawasuso
Acta Phys. Sin. 55(2006)4353-4354.

Annealing process of ion-implantation-induced defects in ZnO: Chemical effect of the ion species
Z. Q. Chen, M. Maekawa, A. Kawasuso, S. Sakai, and H. Naramoto
J. Appl. Phys. 99(2006)93507-93511.

Defects in electron irradiated ZnO studied by positron annihilation
Z.Q. Chen, M. Maekawa, A. Kawasuso, S.Sakai, H.Naramoto
Physica B: Condensed Matter, 376-377(2006)722-725.

Defect Layer in SiO2/SiC Interface Proved by a Slow Positron Beam
M. Maekawa, A. Kawasuso, M. Yoshikawa, A. Miyashita, R. Suzuki and T. Ohdaira
Physica B: Condensed Matter, 376-377(2006)350-353.

Positron study of vacancy defects in SiC
A. Kawasuso, M Yoshikawa, H. Itoh, R. Krause-Rehberg, F. Redmann, T. Chiba, T. Higuchi and K. Betsuyaku
Physica B: Condensed Matter, 376-377(2006)354-357.

Energy variable slow positron beam study of Li+ implantation induced defects in ZnO
Z.Q.Chen, M. Maekawa and A. Kawasuso
Chi. Phys. Lett. 23(2006)675-677.

Structure of SiO2/4H-SiC interface probed by positron annihilation spectroscopy
M. Maekawa, A. Kawasuso, M. Yoshikawa, A.Miyashita,R.Suzuki, and T.Ohdaira
Phys. Rev. B73(2006)14111-14120.

2005

Positron Lifetime Measurement on centrifuged Bi3Pb7 Intermetallic compound
M. Ono, X. Huang, Y. Shibata, Y. Iguchi, S. Sakai, M. Maekawa, Z. Q. Chen, T. Osakabe, A. Kawasuso, H. Naramoto and T. Mashimo
Proc. the 1st Int. Conf. on Diffusion in Solids and Liquids “DSL-2005”, 2 (2005) 531-534.

Interaction of nitrogen with vacancy defects in N+-implanted ZnO studied using a slow positron beam
Z.Q. Chen, M. Maekawa, S. Yamamoto, A.Kawasuso, R. Suzuki and T. Ohdaira
Appl. Phys. Lett.87(2005)91910-91912.

Electron-positron momentum distributions associated with isolated silicon vacancies in 3C SiC
A. Kawasuso, M. Yoshikawa, H. Itoh, T. Chiba, T. Higuchi, F. Redmann and R. Krause-Rehberg
Phys. Rev. B72(2005)45204-45209.

Angular correlation of annihilation radiation associated with vacancy defects in electron-irradiated 6H SiC
A. Kawasuso, T. Chiba and T. Higuchi
Phys. Rev. B71(2005)193204-193207.

Hydrogen implantation induced microvoid formation in ZnO probed by a slow positron beam
Z. Q. Chen, A. Kawasuso, Y. Xu, H. Naramoto, X. L. Yuan, T. Sekiguchi, R. Suzuki and T. Ohdaira
Phys. Rev. B71(2005)115213-115220.

イオンビームを用いたガスバリア性高分子材料の開発
奥地茂人、作道訓之、河裾厚男、前川雅樹
放射線と産業 105(2005)pp.24-28.

Polymetric Co-C60 compund phase evoluted in atmistically mixed thin films
S. Sakai, H. Naramoto, V.Lavrentiev, K. Narumi, M. Maekawa, A. Kawasuso, T. Yaita and Y. Baba
Materials Transcations, 46(2005)765-768.

Structural defects in SiO2/SiC interface probed by a slow positron beam
M. Maekawa, A. Kawasuso, M. Yoshikawa and A. Ichimiya
Appl. Surf. Sci. 244(2005)322-325.

Characterization of homoepitaxial and heteroepitaxial ZnO films grown by pulsed laser deposition
Z. Q. Chen, S.Yamamoto, A. Kawasuso, A. Ichimiya, Y.Xu, T. Sekiguchi
Appl. Surf. Sci. 244(2005)377-380.

Production and recovery of defects in P+-implanted ZnO studied by positron annihilation, Raman scattering, and cathodoluminescence measurements
Z. Q. Chen, Y. Xu, A. Kawasuso, X. L. Yuan, T. Sekiguchi, R. Suzuki and T. Ohdaira
J. Appl. Phys. 97(2005)13528-13533.

2004

Investigation of SiO2/SiC interface using positron annihilation technique
M. Maekawa, A. Kawasuso, M. Yoshikawa, Z. Q. Chen and A. Ichimiya
Materials Science Forum, 457-456(2004)1301-1304.

Evolution of voids in Al+-implanted ZnO probed by a slow positron beam
Z. Q. Chen, M. Maekawa, S. Yamamoto, A. Kawasuso, X. L. Yuan, T. Sekiguchi, R. Suzuki, T. Ohdaira
Phys. Rev. B69 (2004)35210-35219.

Interface properties of 4H SiC MOS structures studied by a slow positron beam
M. Maekawa, A. Kawasuso, M. Yoshikawa,A. Ichimiya
Materials Science Forum, 445-446 (2004)144-146.

Ion-implantation Induced Defects in ZnO Studied by a Slow Positron Beam
Z. Q. Chen, M. Maekawa, T. Sekiguchi, R. Suzuki, A. Kawasuso
Materials Science Forum, 445-446 (2004)57-59.

N+ ion-implantation induced defects in ZnO studied by slow positron beam
Z.Q.Chen, Yamamoto, M.Maekawa, A.Kawasuso, X.L.Yuan, T.Sekiguchi
J. Phys. Condens. Matter. 16(2004)S293-S299.

2003

Vacancy defects detected by positron annihilation
A. Kawasuso, M. Weidner, F. Redmann, T. Frank, M. Yoshikawa, T. Itoh, P. Sperr, G. Koegel, W. Triftshaeuser, R. Krause-Rehberg, G. Pensl
'Silicon Carbide, Recent Majour Advances', eds. G. Pensl, H. Matsunami and J. Choyke, Springer, Berlin (2003). pp. 563-584.

Fluorine-doping in titanium dioxide by ion implantaion technique
T. Yamaki, T. Umebayashi, T. Sumita, S. Yamamoto, M. Maekawa, A. Kawasuso and H. Itoh
Nucl. Inst. & Meth. In Phys. Res. B 206(2003)254-258.

Postgrowth Annealing of Defects in ZnO Studied by Positron Annihilation, X-ray Diffraction, Rutherford Backscattering, Cathodoluminescence and Hall Measurement
Z.Q. Chen, S. Yamamoto, M. Maekawa, A.Kawasuso, T.Sekiguchi
J. Appl. Phys. 94(2003)4807-4812.

SiO2-SiC interface proved by positron annihilation
M. Maekawa, A. Kawasuso, M. Yoshikawa and H. Itoh
Appl. Surf. Sci. 216 (2003) 365-370.

Structural defects at SiO2-SiC interfaces detected by positron annihilation
M. Maekawa, A. Kawasuso, M. Yoshikawa, and H. Itoh
Materials Science Forum, 433-436 (2003) 559-562.

Polytype-dependent vacancy annealing studied by positron annihilation
A. Kawasuso, M. Yoshikawa, M. Maekawa, H. Itoh, T. Chiba, F. Redmann, R. Krause-Rehberg, M. Weidner, T. Frank, G. Pensl
Materials Science Forum, 433-436 (2003) 477-480.

2002

Radiation-induced defects in 4H and 6H SiC epilayers studied by positron annihilation and deep level transient spectroscopy
A. Kawasuso, M. Weidner, F. Redmann, T. Frank, R. Krause-Rehberg, G. Pensl, P. Sperr, M. Yoshikawa, K. Kojima and H. Itoh,
Materials Science Forum, 389-393(2002)489-493.

2001

Defects in 30 keV Er+ -implanted SiO2/Si studied by positron annihilation and cathodoluminescence
K. Hirata, H. Arai, A. Kawasuso, T. Sekiguchi, Y. Kobayashi and S. Okada
J. Appl. Phys. 90 (2001) 237-242.

Development of pulsed MeV positron beam line
M. Maekawa, M. Kondo, S. Okada, A. Kawasuso and H. Itoh
Rad. Phys. Chem. 60 (2001) 525-528.

Research and Development of High Energy Pulsed Positron Beam
M. Maekawa, A. Kawasuso, S. Okada, H. Itoh
Materials Science Forum, 363-365(2001)658-660.

Annealing behavior of vacancies and Z1/2 levels in electron-irradiated 4H-SiC studied by positron annihilation and deep level transient spectroscopy
A. Kawasuso, F. Redmann, R. Krause-Rehberg, M. Weidner, T. Frank, G. Pensl, P. Sperr, W. Triftshauser and H. Itoh
Appl. Phys. Lett., 79 (2001) 3950-3952.

Formation and annihilation of intrinsic-related defects in high-energy electron-irradiated or He irradaited 4H SiC
M. Weidner, T. Frank, G. Pensl, A. Kawasuso, H. Itoh, R. Krause-Rehberg
Physica B: Condensed Matter, 308-310 (2001) 633-636.

Effect of illumination on positron lifetime in electron-irradiated 6H SiC
F. Redmann, A. Kawasuso, R. Krause-Rehberg, H. Itoh
Materials Science Forum, 363-365 (2001)126-128.

Annealing processes of defects in epitaxial SiC irradiated by He and electron
A.Kawasuso, F. Redmann, R. Krause-Rehberg, P. Sperr, M. Weidner, T. Frank, G. Pensl, H. Itoh
Materials Science Forum, 353-356 (2001) 537-540.

Positron annihilation due to silicon vacancies in 3C and 6H SiC induced by 1 MeV electron irradiation
A. Kawasuso, F. Redmann, R. Krause-Rehberg, M. Yoshikawa, K. Kojima and H. Itoh
Phys. Stat. Sol. (b) 223 (2001)R8-10.

Vacancies and deep levels in electron-irradiated 6H SiC epilayers studied by positron annihilation and deep level transient spectroscopy
A. Kawasuso, F. Redmann, R. Krause-Rehberg,T. Frank, M. Weidner, G. Pensl,P. Sperr,H. Itoh
J. Appl. Phys. 90 (2001)3377-3382.

Vacancies in He-implanted 4H and 6H SiC epilayers studied by positron annihilation
A. Kawasuso, M. Weidner, F. Redmann, T. Frank, P. Sperr, R. Krause-Rehberg and G. Pensl
Physica B: Condensed Matter, 308-310 (2001) 660-663.

Illumination effects in irradiated 6H n-type SiC observed by positron annihilation spectroscopy
F. Redmann, A. Kawasuso, H. Itoh, R. Krause-Rehberg
Physica B: Condensed Matter, 308-310 (2001) 629-632.

2000

Effect of radiation damage on luminescence of Er-implanted SiO2/Si studied by slow positron beam
A. Kawasuso, H. Arai, K. Hirata, T. Sekiguchi, Y. Kobayashi and S. Okada
Rad. Phys. Chem. 58 (2000)615-619.

1999

陽電子消滅法を用いた立方晶シリコンカーバイドにおける点欠陥の評価

伊藤久義、河裾厚男、大島武、吉川正人、梨山勇、岡田漱平、谷川庄一郎、奥村元、吉田貞史 電子総合技術研究所彙報、第62巻 第10,11号別冊(1999) 23.

低速陽電子ビームによるエルビウム注入シリコン系光学材料の構造変化に関する研究荒井秀幸、河裾厚男、平田浩一、関口隆史、小林善規、岡田漱平, JAERI-memo 11-051(1999)1-31

1998

Silicon vacancies in 3C-SiC observed by positron lifetime and electron spin resonance
A. Kawasuso, H. Itoh, M. Morishita, M. Yoshikawa, T. Ohshima, I. Nashiyama, S. Okada, H. Okumura and S. Yoshida
Appl. Phys. A67 (1998) 209-212.

同時計数法によるドップラー幅高精度測定 河裾厚男, 放射線 第24巻 第3号(1998)21.

陽電子利用研究の展望 岡田漱平、河裾厚男, 放射線化学 No.65 (1998) 6-28.

1997

Internal positron source production with a Cyclotron and vacancy study in Si
A. Kawasuso, S. Masuno, S. Okada, M. Hasegawa and M. Suezawa
JAERI-Conf. 97-003 (1997) 476-479.

Characterization of defects in electron irradiated 6H-SiC by positron lifetime and electron spin resonance
A. Kawasuso, H. Itoh, D. Cha and S. Okada
Materials Science Forum, 264-268 (1997) 611-614.

Annealing processes of vacancy-type defects in as-grown and 3 MeV electron-irradiated 6H-SiC studied by positron lifetime Measurement
A. Kawasuso, H. Itoh, S. Okada and H. Okumura
J. Appl. Phys. 80 (1996) 5639-5645.

Positron annihilation in electron-irradiated SiGe bulk crystals
A. Kawasuso, S. Okada, M. Suezawa, I. Yonenaga and T. Honda
J. Appl. Phys. 81(1997) 2916-2918.

Anomalous temperature dependence of positron trapping due to divacancies in Si
A. Kawasuso and S. Okada
Jpn. J. Appl. Phys. 36 (1997) 605-611.

Vacancy-hydrogen interaction in proton-implanted Si studied by positron lifetime and infrared absorption measurements
A. Kawasuso, H. Arai, S. Okada
Materials Science Forum, 255-257 (1997) 548-550.

Positron 2D-ACAR Study of Divacancies in Si: Experiments and Theory
M. Hasegawa, Z. Tang, T. Chiba, M. Saito, A. Kawasuso, T. Akahane, Z-Q. Li, Y. Kawazoe and S. Yamaguchi
Materials Sceince Forum, 255-257 (1997) 414-416.

Positron annihilation study of electron irradiated SiGe bulk alloys
A. Kawasuso, S. Okada, I. Yonenaga, T. Honda, M. Suezawa
Materials Sceince Forum, 258-263 (1997) 127-132.

Anisotropy in the positron 2D angular correlation of annihilation radiation for singly negative divacancies in Si
Z. Tang, M. Hasegawa, T. Chiba, M. Saito, A. Kawasuso, Z.Q.Li, R.T.Fu, T. Akahane, Y. Kawazoe and S. Yamaguchi
Phys. Rev. Lett. 78 (1997) 2236-2239.

Characterization of defects in electron irradiated 6H-SiC by positron lifetime and electron spin resonance
A. Kawasuso, H. Itoh, D. Cha, and S. Okada
Materials Science Forum, 264-268 (1997) 611-614.

Vacancy production in 6H-SiC irradiated with 3 MeV electrons studied by positron lifetime spectroscoty
A. Kawasuso, H. Itoh, T. Ohshima, K. Abe and S. Okada
J. Appl. Phys. 82 (1997) 3232-3238.

Intrinsic defects in cubic silicon carbide
H. Itoh, A. Kawasuso, T. Ohshima, M. Yoshikawa, I. Nashiyama, S. Tanigawa, S. Misawa, H. Okumura and S. Yoshida
Phys. Stat. Sol. (a) 162 (1997) 173-198.

1996

バルク半導体中の欠陥

河裾厚男、長谷川雅幸, 日本金属学会報 ”まてりあ” 第35巻 第2号(1996)130.

1995

An annealing study of defects induced by electron irradition of Czochralski-grown Si using postiron lifetime technique
A. Kawasuso, M. Hasegawa, M. Suezawa, S. Yamaguchi and K. Sumino
Applied Surface Science, 85 (1995) 280-286.

Annealing processes of radiation-induced defects in Si; Analysis using positron lifetime measurement
A. Kawasuso, M. Hasegawa, M. Suezawa, S. Yamaguchi and K. Sumino
Materials Science Forum, 175-178 (1995) 423-426.

Positron 2D-ACAR study on divacancy in Si
T. Chiba, A. Kawasuso, M. Hasegawa, M. Suezawa, T. Akahane, and K. Sumino
Materials Science Forum, 175-178 (1995)327-330.

Charge state dependences of positron trapping rates associated with divacancies and vacancy-phosphorus pairs in Si
A. Kawasuso, M. Hasegawa, M. Suezawa, S. Yamaguchi and K. Sumino
Jpn. J. Appl. Phys. 34 (1995) 2197-2206.

Positron annihilation in divacancies in Si: Lifetime and 2D-ACAR
M. Hasegawa, A. Kawasuso, T. Chiba, T. Akahane, M. Suezawa, S. Yamagichi and K. Sumino
Appl. Phys. A, 61 (1995) 65-70.

Positron annihilations associated with defects in plastically deformed Si
A. Kawasuso, M. Suezawa, M. Hasegawa, S. Yamaguchi and K. Sumino
Jpn. J. Appl. Phys. 34 (1995) 4579-4586.

A positron lifetime study of plastically deformed Si
A. Kawasuso, M. Suezawa, M. Hasegawa, S. Yamaguchi and K. Sumino
Materials Science Forum, 196-201 (1995) 1177-1182.

Positron annihilation 2D-ACRA study of divacancies and vacancy-oxygen pairs in Si
M. Hasegawa, T. Chiba, A. Kawasuso, T. Akahane, M. Suezawa, S. Yamagichi and K. Sumino
Materials Science Forum, 196-201 (1995) 1481-1489.

Study of divacancy in Si using positron lifetime measurement
A. Kawasuso, M. Hasegawa, M. Suezawa, S. Yamaguchi and K. Sumino
Hyperfine Interactions, 84 (1994) 397-406.

受賞

平成26年度文部科学大臣表彰 科学技術賞 研究部門
受賞タイトル 全反射陽電子回折法とそれによる固体表面物性の研究
受賞者 河裾厚男、一宮彪彦、岡田漱平
独立行政法人日本原子力研究開発機構 研究開発功績賞 平成25年度
受賞タイトル スピン偏極陽電子ビームの開発とスピン物性の先駆的研究
受賞者 スピン偏極陽電子ビーム研究グループ(河裾厚男、前川雅樹、深谷有喜)
第5回(2011年) 日本物理学会若手奨励賞
受賞論文 Phys. Rev. B 70(24), 245422 1-5 (2004), Phys. Rev. B 75(11), 115424 1-7 (2007), Phys. Rev. B 79(19), 193310 1-4 (2009).
受賞者 深谷有喜
独立行政法人科学技術振興機構・原子力システム研究開発事業若手表彰 平成20年度
受賞者 河裾厚男
社団法人日本表面科学会 技術賞 平成16年度
受賞論文「TopMost Surface Studies by Total Reflection Positron Diffraction」 eJSSN vol.1 152-157 (2004).
受賞者 河裾厚男、石本貴幸、深谷有喜、林和彦、一宮彪彦
独立行政法人日本原子力研究開発機構 研究開発功績賞 平成20年度
受賞タイトル シリコン表面上の銀吸着超構造の原子配列と相転移メカニズム
受賞者 深谷有喜
日本原子力研究所 有効賞 平成14年度
受賞タイトル「反射高速陽電子回折技術の開発」
受賞者 河裾厚男

プレス発表

世界に先駆けた技術を用いて、酸化亜鉛に放射線を照射すると強磁性が現れる仕組みを解明 平成29年4月24日
上毛新聞(4/26)、化学日報(4/26)、他ウェブニュース等で多数取り上げて頂きました(感謝)。
非磁性体の電子スピンをありのままで観測~陽電子ビームの可能性の創出~平成27年4月13日
科学新聞(4/24) 記事掲載ありがとうございました!
全反射高速陽電子回折法「TRHEPD法」の高度化により究極の表面構造解析が可能に 平成26年4月21日
日刊工業新聞(4/30)、他ウェブニュース等で多数取り上げて頂きました(感謝)。
反射高速陽電子回折法によりシリセンの構造決定に成功 平成25年11月21日
日経産業新聞(11/22)、他ウェブニュース等で多数取り上げて頂きました(感謝)。
世界最高のスピン偏極率を持った陽電子ビームの開発に成功-電子スピンの新たな検出法の開発に道筋-平成25年5月17日
原子力産業新聞(6/13)
世界最高レベルの収束度を持つ小型陽電子顕微鏡を開発-原子力材料のミクロな劣化診断が可能に-平成19年12月7日
上毛新聞(12/7)、日刊工業新聞(12/7)、日経産業新聞(12/7)、電気新聞(12/7)、朝日新聞全国版(12/14)
高輝度陽電子ビームを用いて表面ナノ物質の原子立体配列の観測に成功―陽電子で物質最表面の顕微技術が可能に― 平成18年8月7日
上毛新聞朝刊8/8、日刊工業新聞朝刊8/8、日経産業新聞朝刊8/8、電気新聞朝刊8/8、原子力産業新聞8/24
陽電子を用いて新しい表面分析技術の開発に成功 平成13年11月12日
産経新聞11/12、原子力産業新聞11/22、科学新聞11/23、日本工業新聞11/13、化学工業日報11/14、東京新聞11/13、日刊工業新聞11/13、上毛新聞11/13

特許

反射高速陽電子回折の陽電子ビームを形成する方法 特開2001-351556
酸化亜鉛表層にn型伝導層を形成する方法 特開2005-277123 イオン注入による半絶縁酸化亜鉛の作製方法 特開2005-347525

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PDF形式のファイルをご覧いただく場合には、Adobe社が提供するAdobe Readerが必要です。
Adobe Readerをお持ちでない方は、バナーのリンク先からダウンロードしてください。(無料)
Adobe Reader provided by Adobe is required to view PDF format files.