Made by HAMAMATSU PHOTONICS Co. Ltd. (Japan)
Type: PIN photo diode S3706-SPL 9402 (specially made for JT-60U)
| Effective area | .................. | 2 x 20 mm |
| Thickness of oxidized layer | .................. | 300 angstrom |
| Maximum inverse voltage (VR) | .................. | 30 V |
| Dark current | .................. | 0.3 nA (VR=10 V) |
| 0.8 nA (VR=30 V) | ||
| Capacitance | .................. | 50 pF (VR=10 V) |
| 35 pF (VR=30 V) | ||
| Connector | .................. | FFA00250 |
