論文
陽電子消滅法による材料物性研究
2015
Enhanced damage buildup in C+-implanted GaN film studied by a monoenergetic positron beam
X. F. Li, Z. Q. Chen, C. Liu, H. J. Zhang, and A. Kawasuso
J. Appl. Phys. 117(2015)085706-1-5.
2014
Defects and acceptor centers in ZnO introduced by C+-implantation
M. Jiang , X. D. Xue, Z. Q. Chen, Y. D. Liu, H. W. Liang, H. J. Zhang, A. Kawasuso
J Mater Sci. 49( (2014) )1994-1999.
2013
Positron annihilation Doppler broadening study of Xe-implanted aluminum
R.S. Yu,., M. Maekawa, A. Kawasuso, B.Y. Wang, L. Wei
Appl. Surf. Sci. 282(2013)724.
Observation of spatial distribution of vacancy defects in semiconductor by positron microscope and electron beam induced current measurement
M Maekawa and A Kawasuso
J. Phys. Conf. Ser. 443(2013)012041(4).
Suppression of vacancy aggregation by silicon-doping in low-temperature-grown GaCrN
A. Yabuuchi, M. Maekawa, A. Kawasuso, Y.-K. Zhou, S. Hasegawa, and H. Asahi
Appl. Phys. Lett. 102 (2013）142406(4 pages).
Location and size of nanoscale free-volume holes in crosslinked-polytetrafluoroethylene-based graft-type polymer electrolyte membranes determined by positron annihilation lifetime spectroscopy
S. Sawada, A. Yabuuchi, M. Maekawa, A. Kawasuso, Y. Maekawa
Rad. Phys. Chem. 87 (2013) 46-52.
2012
Study of defects in H+ ion implanted B2 type Fe-Al alloy using slow positron beam
S. Komagata, A. Kawasuso, A. Yabuuchi, M. Maekawa, C. Batchulun, K. Yasuda, R. Ishigami, K. Kume, A. Iwase and F. Hori
Physics Procedia 35(2012)75-79.
Influence of oversized elements (Hf, Zr, Ti and Nb) on the thermal stability of vacancies in type 316L stainless steels
A. Yabuuchi, M. Maekawa, A. Kawasuso
J. Nucl. Mater. 430(2012)190-193.
Positron annihilation study of 4H-SiC by Ge implanted and subsequent thermal annealing
R. S. Yu, M. Maekawa, A. Kawasuso, B. Y. Wang and L. Wei
Nucl. Inst. Meth. in Phys. Res. B270 (2012) 47-49.
Development of pulsed positron beam line with compact pulsing system
M. Maekawa and A. Kawasuso
Nucl. Inst. Meth. in Phys. Res. B270 (2012) 23-27.
2011
Microstructure of Nearly Stoichiometric ZrC Coating Layers for Advanced High Temperature Gas Cooled Reactor Fuel and Positron Annihilation Spectroscopy of Various ZrC coating layers
J. Aihara, M. Maekawa, S. Ueta, A. Kawasuso and K. Sawa
J. Am. Ceram. Soc. 94(2011)4516-4522.
Vacancy defects in a stress-corrosion-cracked Type 304 stainless steel investigated by positron annihilation spectroscopy
A. Yabuuchi, M. Maekawa, A. Kawasuso
J. Nucl. Matt. 419(2011)9-14.
Defect Structure of MBE-grown GaCrN Diluted Magnetic Semiconductor Film
A. Yabuuchi, M. Maekawa, A. Kawasuso, S. Hasegawa,, Yi-Kai Zhou and H. Asahi
J. Phys. Conf. Ser. 262(2011)012066.
Positron Microbeam Study on Vacancy Generation Caused by Stress Corrosion Crack Propagation in Austenitic Stainless Steels
A. Yabuuchi, M. Maekwa and A. Kawasuso
J. Phys. Conf. Ser. 262(2011)012067.
A study of defects in electron- and ion-irradiated ZrCuAl bulk glassy alloy using positron annihilation techniques
F. Hori, N. Onodera, Y. Fukumoto, A. Ishii, A. Iwase, A. Kawasuso, A. Yabuuchi, M. Maekawa and Y. Yokoyama
J. Phys. Conf. Ser. 262(2011)012025.
2010
Spin conversion of positronium in NiO/Al2O3 catalysts observed by coincidence Doppler broadening technique
H.J. Zhang, Z. Q. Chen, S. J. Wang, A. Kawasuso and N. Morishita
Phys. Rev. B 82 (2010)035439-10.
原子力機構における陽電子マイクロビームの生成・利用
前川雅樹、薮内敦、河裾厚男
放射線 36(2010)13-20.
Free volume in Zr-based bulk glassy alloys studied by positron annihilation techniques
A Ishii, A. Iwase Y. Yokoyama, T. J. Konno, A. Kawasuso, A Yabuuchi, M.Maekawa, and F. Hori
J. Phys. Conf. Ser. 225(2010)012020.
Free-volume structure of fluoropolymer-based radiationgrafted electrolyte membranes investigated by positron annihilation lifetime spectroscopy
S. Sawada, A. Kawasuso, M. Maekawa, A. Yabuuchi, Y. Maekawa
J. Phys. Conf. Ser. 225(2010)012048.
Coincidence Doppler broadening spectra of some single-element materials from the second to the sixth periods
A. Kawasuso, M. Maekawa and K. Betsuyaku
J. Phys. Conf. Ser. 225(2010)012027.
Characterization of the Helium Bubbles in Si Probed by a Slow Positron Beam
M. Maekawa, A. Kawasuso
J. Phys. Conf. Ser. 225(2010)012032.
Evaluation of stainless steel under tensile stress using positron microbeam
M. Maekawa, A. Yabuuchi, A. Kawasuso
J. Phys. Conf. Ser. 225(2010)012033.
2009
陽電子消滅法による材料評価
河裾厚男、前川雅樹
放射線と産業 124(2009)15-20.
TiCrV hydrogen storage alloy studied by positron annihilation spectroscopy
A. Kawasuso, H. Arashima, M. Maekawa, H. Itoh, and T. Kabutomori
J. Alloy Compd. 486(2009)278-283.
Microstructure evolution of Ge+ implanted silicon oxide thin films upon annealing treatment
R.S.Yu, M. Maekawa, A. Kawasuso. T. Sekiguchi, B.Y.Wang, X.B.Qin, Q. Z. Wang
Nucl. Inst. & Meth. In Phys. Res. B 267 (2009) 3097-3099.
Ferromagnetism and microstructure in Fe+-implanted ZnO
D. Wanga, Z.Q. Chen, F. Zhou, W. Lub, M. Maekawa, A. Kawasuso
Appl. Surf. Sci. 255 (2009) 9371-9375.
Recent findings on blistering and deuterium retention in tungsten exposed to high-fluence deuterium plasma
W.M. Shu, A. Kawasuso and T. Yamanishi
J. Nucl. Matter. 386-388 (2009) 356-359.
Vacancy Generation in Si During Solid-Liquid Transition Observed by Positron Annihilation Spectroscopy
M. Maekawa, A. Kawasuso
Jpn. J. Appl. Phys. 48(2009)030203-030205..
Application of positron microprobe for nuclear materials
M. Maekawa, A. Kawasuso, T. Hirade, Y. Miwa and A. Nishimura,
Mater. Sci. For. 607(2009)266-268.
Positron annihilation lifetime study of electrolyte membranes
S. Sawada, A. Kawasuso, M. Maekawa, A. Suzuki, T. Terai and Y. Maekawa
Mater. Sci. For. 607(2009)70-72.
Positron Lifetime Study on Degradation of TiCrV Hydrogen Storage Alloy
A. Kawasuso, H. Arashima, M. Maekawa and T. Kabutomori
Mater. Sci. For. 607(2009)122-124.
2008
Construction of a positron micro-beam in JAEA
M.Maekawa and A. Kawasuso
Appl. Surf. Sci. 255(2008)39-41.
Development and application of positron microbeam
M. Maekawa, A. Kawasuso, T. Hirade and Y. Miwa
Trans. Matter Res. Soc. Jpn. 33(2008)287-290.
Vacancy defects in electron-irradiated ZnO studied by Doppler broadening of annihilation radiation
Z.Q.Chen, K. Betsuyaku and A. Kawasuso
Phys. Rev. B77(2008)113204-113207.
2007
Characterization of swift-ion induced defects in FeRh alloy by using positron beam technique
N. Hori, M. Fukuzumi, A. Kawasuso, Y. Chimi, N. Ishikawa and A. Iwase
Phys. Stat. Sol. (c)4(2007)3530-3533.
Ion species dependence of the implantation-induced defects in ZnO studied by a slow positron beam
Z. Q. Chen, M. Maekawa, A. Kawasuso, H. Naramoto
Phys. Stat. Sol. (c)4(2007)3646-3649.
Positron microscopic analysis of crack failure in stainless steels
R. Yu, M. Maekawa, Y. Miwa, T. Hirade, A. Nishimura and A. Kawasuso
Phys. Stat. Sol. (c)4(2007)3577-3580.
Design of a positron microbeam using magnetic lenses
M. Maekawa, R. Yu and A. Kawasuso
Phys. Stat. Sol. (c)4(2007)4016-4019.
Characterization of ion beam-induced SiC-OI structures probed by positron annihilation spectroscopy
M. Maekawa, R. Yu and A. Kawasuso
Phys. Stat. Sol. (c)4(2007)3680-3683.
Thermal evolution of defects in as-grown and electron-irradiated ZnO studied by positron annihilation
Z. Q. Chen, S. J. Wang, M. Maekawa, A. Kawasuso, H. Naramoto, X. L. Yuan, and T. Sekiguchi
Phys. Rev. B75(2007)245206-245214.
Microstructure dependence of deuterium retention and blistering in the near-surface region of tungsten exposed to high flux deuterium plasmas of tens of 38eV
W. M. Shu, A. Kawasuso, Y. Miwa, E. Wakai, G.-N. Luo, d and T. Yamanishi
Physica Scipta T128(2007)96-99.
2006
Vacancy-type defects induced by He-implantation in ZnO studied by a slow positron beam
Z. Q. Chen, A. Kawasuso
Acta Phys. Sin. 55(2006)4353-4354.
Annealing process of ion-implantation-induced defects in ZnO: Chemical effect of the ion species
Z. Q. Chen, M. Maekawa, A. Kawasuso, S. Sakai, and H. Naramoto
J. Appl. Phys. 99(2006)93507-93511.
Defects in electron irradiated ZnO studied by positron annihilation
Z.Q. Chen, M. Maekawa, A. Kawasuso, S.Sakai, H.Naramoto
Physica B: Condensed Matter, 376-377(2006)722-725.
Defect Layer in SiO2/SiC Interface Proved by a Slow Positron Beam
M. Maekawa, A. Kawasuso, M. Yoshikawa, A. Miyashita, R. Suzuki and T. Ohdaira
Physica B: Condensed Matter, 376-377(2006)350-353.
Positron study of vacancy defects in SiC
A. Kawasuso, M Yoshikawa, H. Itoh, R. Krause-Rehberg, F. Redmann, T. Chiba, T. Higuchi and K. Betsuyaku
Physica B: Condensed Matter, 376-377(2006)354-357.
Energy variable slow positron beam study of Li+ implantation induced defects in ZnO
Z.Q.Chen, M. Maekawa and A. Kawasuso
Chi. Phys. Lett. 23(2006)675-677.
Structure of SiO2/4H-SiC interface probed by positron annihilation spectroscopy
M. Maekawa, A. Kawasuso, M. Yoshikawa, A.Miyashita,R.Suzuki, and T.Ohdaira
Phys. Rev. B73(2006)14111-14120.
2005
Positron Lifetime Measurement on centrifuged Bi3Pb7 Intermetallic compound
M. Ono, X. Huang, Y. Shibata, Y. Iguchi, S. Sakai, M. Maekawa, Z. Q. Chen, T. Osakabe, A. Kawasuso, H. Naramoto and T. Mashimo
Proc. the 1st Int. Conf. on Diffusion in Solids and Liquids “DSL-2005”, 2 (2005) 531-534.
Interaction of nitrogen with vacancy defects in N+-implanted ZnO studied using a slow positron beam
Z.Q. Chen, M. Maekawa, S. Yamamoto, A.Kawasuso, R. Suzuki and T. Ohdaira
Appl. Phys. Lett.87(2005)91910-91912.
Electron-positron momentum distributions associated with isolated silicon vacancies in 3C SiC
A. Kawasuso, M. Yoshikawa, H. Itoh, T. Chiba, T. Higuchi, F. Redmann and R. Krause-Rehberg
Phys. Rev. B72(2005)45204-45209.
Angular correlation of annihilation radiation associated with vacancy defects in electron-irradiated 6H SiC
A. Kawasuso, T. Chiba and T. Higuchi
Phys. Rev. B71(2005)193204-193207.
Hydrogen implantation induced microvoid formation in ZnO probed by a slow positron beam
Z. Q. Chen, A. Kawasuso, Y. Xu, H. Naramoto, X. L. Yuan, T. Sekiguchi, R. Suzuki and T. Ohdaira
Phys. Rev. B71(2005)115213-115220.
イオンビームを用いたガスバリア性高分子材料の開発
奥地茂人、作道訓之、河裾厚男、前川雅樹
放射線と産業 105(2005)pp.24-28.
Polymetric Co-C60 compund phase evoluted in atmistically mixed thin films
S. Sakai, H. Naramoto, V.Lavrentiev, K. Narumi, M. Maekawa, A. Kawasuso, T. Yaita and Y. Baba
Materials Transcations, 46（2005）765-768.
Structural defects in SiO2/SiC interface probed by a slow positron beam
M. Maekawa, A. Kawasuso, M. Yoshikawa and A. Ichimiya
Appl. Surf. Sci. 244(2005)322-325.
Characterization of homoepitaxial and heteroepitaxial ZnO films grown by pulsed laser deposition
Z. Q. Chen, S.Yamamoto, A. Kawasuso, A. Ichimiya, Y.Xu, T. Sekiguchi
Appl. Surf. Sci. 244(2005)377-380.
Production and recovery of defects in P+-implanted ZnO studied by positron annihilation, Raman scattering, and cathodoluminescence measurements
Z. Q. Chen, Y. Xu, A. Kawasuso, X. L. Yuan, T. Sekiguchi, R. Suzuki and T. Ohdaira
J. Appl. Phys. 97(2005)13528-13533.
2004
Investigation of SiO2/SiC interface using positron annihilation technique
M. Maekawa, A. Kawasuso, M. Yoshikawa, Z. Q. Chen and A. Ichimiya
Materials Science Forum, 457-456(2004)1301-1304.
Evolution of voids in Al+-implanted ZnO probed by a slow positron beam
Z. Q. Chen, M. Maekawa, S. Yamamoto, A. Kawasuso, X. L. Yuan, T. Sekiguchi, R. Suzuki, T. Ohdaira
Phys. Rev. B69 (2004)35210-35219.
Interface properties of 4H SiC MOS structures studied by a slow positron beam
M. Maekawa, A. Kawasuso, M. Yoshikawa,A. Ichimiya
Materials Science Forum, 445-446 (2004)144-146.
Ion-implantation Induced Defects in ZnO Studied by a Slow Positron Beam
Z. Q. Chen, M. Maekawa, T. Sekiguchi, R. Suzuki, A. Kawasuso
Materials Science Forum, 445-446 (2004)57-59.
N+ ion-implantation induced defects in ZnO studied by slow positron beam
Z.Q.Chen, Yamamoto, M.Maekawa, A.Kawasuso, X.L.Yuan, T.Sekiguchi
J. Phys. Condens. Matter. 16(2004)S293-S299.
2003
Vacancy defects detected by positron annihilation
A. Kawasuso, M. Weidner, F. Redmann, T. Frank, M. Yoshikawa, T. Itoh, P. Sperr, G. Koegel, W. Triftshaeuser, R. Krause-Rehberg, G. Pensl
'Silicon Carbide, Recent Majour Advances', eds. G. Pensl, H. Matsunami and J. Choyke, Springer, Berlin (2003). pp. 563-584.
Fluorine-doping in titanium dioxide by ion implantaion technique
T. Yamaki, T. Umebayashi, T. Sumita, S. Yamamoto, M. Maekawa, A. Kawasuso and H. Itoh
Nucl. Inst. & Meth. In Phys. Res. B 206(2003)254-258.
Postgrowth Annealing of Defects in ZnO Studied by Positron Annihilation, X-ray Diffraction, Rutherford Backscattering, Cathodoluminescence and Hall Measurement
Z.Q. Chen, S. Yamamoto, M. Maekawa, A.Kawasuso, T.Sekiguchi
J. Appl. Phys. 94(2003)4807-4812.
SiO2-SiC interface proved by positron annihilation
M. Maekawa, A. Kawasuso, M. Yoshikawa and H. Itoh
Appl. Surf. Sci. 216 (2003) 365-370.
Structural defects at SiO2-SiC interfaces detected by positron annihilation
M. Maekawa, A. Kawasuso, M. Yoshikawa, and H. Itoh
Materials Science Forum, 433-436 (2003) 559-562.
Polytype-dependent vacancy annealing studied by positron annihilation
A. Kawasuso, M. Yoshikawa, M. Maekawa, H. Itoh, T. Chiba, F. Redmann, R. Krause-Rehberg, M. Weidner, T. Frank, G. Pensl
Materials Science Forum, 433-436 (2003) 477-480.
2002
Radiation-induced defects in 4H and 6H SiC epilayers studied by positron annihilation and deep level transient spectroscopy
A. Kawasuso, M. Weidner, F. Redmann, T. Frank, R. Krause-Rehberg, G. Pensl, P. Sperr, M. Yoshikawa, K. Kojima and H. Itoh,
Materials Science Forum, 389-393(2002)489-493.
2001
Defects in 30 keV Er+ -implanted SiO2/Si studied by positron annihilation and cathodoluminescence
K. Hirata, H. Arai, A. Kawasuso, T. Sekiguchi, Y. Kobayashi and S. Okada
J. Appl. Phys. 90 (2001) 237-242.
Development of pulsed MeV positron beam line
M. Maekawa, M. Kondo, S. Okada, A. Kawasuso and H. Itoh
Rad. Phys. Chem. 60 (2001) 525-528.
Research and Development of High Energy Pulsed Positron Beam
M. Maekawa, A. Kawasuso, S. Okada, H. Itoh
Materials Science Forum, 363-365(2001)658-660.
Annealing behavior of vacancies and Z1/2 levels in electron-irradiated 4H-SiC studied by positron annihilation and deep level transient spectroscopy
A. Kawasuso, F. Redmann, R. Krause-Rehberg, M. Weidner, T. Frank, G. Pensl, P. Sperr, W. Triftshauser and H. Itoh
Appl. Phys. Lett., 79 (2001) 3950-3952.
Formation and annihilation of intrinsic-related defects in high-energy electron-irradiated or He irradaited 4H SiC
M. Weidner, T. Frank, G. Pensl, A. Kawasuso, H. Itoh, R. Krause-Rehberg
Physica B: Condensed Matter, 308-310 (2001) 633-636.
Effect of illumination on positron lifetime in electron-irradiated 6H SiC
F. Redmann, A. Kawasuso, R. Krause-Rehberg, H. Itoh
Materials Science Forum, 363-365 (2001)126-128.
Annealing processes of defects in epitaxial SiC irradiated by He and electron
A.Kawasuso, F. Redmann, R. Krause-Rehberg, P. Sperr, M. Weidner, T. Frank, G. Pensl, H. Itoh
Materials Science Forum, 353-356 (2001) 537-540.
Positron annihilation due to silicon vacancies in 3C and 6H SiC induced by 1 MeV electron irradiation
A. Kawasuso, F. Redmann, R. Krause-Rehberg, M. Yoshikawa, K. Kojima and H. Itoh
Phys. Stat. Sol. (b) 223 (2001)R8-10.
Vacancies and deep levels in electron-irradiated 6H SiC epilayers studied by positron annihilation and deep level transient spectroscopy
A. Kawasuso, F. Redmann, R. Krause-Rehberg,T. Frank, M. Weidner, G. Pensl,P. Sperr,H. Itoh
J. Appl. Phys. 90 (2001)3377-3382.
Vacancies in He-implanted 4H and 6H SiC epilayers studied by positron annihilation
A. Kawasuso, M. Weidner, F. Redmann, T. Frank, P. Sperr, R. Krause-Rehberg and G. Pensl
Physica B: Condensed Matter, 308-310 (2001) 660-663.
Illumination effects in irradiated 6H n-type SiC observed by positron annihilation spectroscopy
F. Redmann, A. Kawasuso, H. Itoh, R. Krause-Rehberg
Physica B: Condensed Matter, 308-310 (2001) 629-632.
2000
Effect of radiation damage on luminescence of Er-implanted SiO2/Si studied by slow positron beam
A. Kawasuso, H. Arai, K. Hirata, T. Sekiguchi, Y. Kobayashi and S. Okada
Rad. Phys. Chem. 58 (2000)615-619.
1999
陽電子消滅法を用いた立方晶シリコンカーバイドにおける点欠陥の評価
伊藤久義、河裾厚男、大島武、吉川正人、梨山勇、岡田漱平、谷川庄一郎、奥村元、吉田貞史 電子総合技術研究所彙報、第62巻 第10,11号別冊(1999) 23.
低速陽電子ビームによるエルビウム注入シリコン系光学材料の構造変化に関する研究
荒井秀幸、河裾厚男、平田浩一、関口隆史、小林善規、岡田漱平, JＡＥＲＩ-memo 11-051(1999)1-31
1998
Silicon vacancies in 3C-SiC observed by positron lifetime and electron spin resonance
A. Kawasuso, H. Itoh, M. Morishita, M. Yoshikawa, T. Ohshima, I. Nashiyama, S. Okada, H. Okumura and S. Yoshida
Appl. Phys. A67 (1998) 209-212.
同時計数法によるドップラー幅高精度測定
河裾厚男, 放射線 第24巻 第3号(1998)21.
陽電子利用研究の展望
岡田漱平、河裾厚男, 放射線化学 No.65 (1998) 6-28.
1997
Internal positron source production with a Cyclotron and vacancy study in Si
A. Kawasuso, S. Masuno, S. Okada, M. Hasegawa and M. Suezawa
JAERI-Conf. 97-003 (1997) 476-479.
Characterization of defects in electron irradiated 6H-SiC by positron lifetime and electron spin resonance
A. Kawasuso, H. Itoh, D. Cha and S. Okada
Materials Science Forum, 264-268 (1997) 611-614.
Annealing processes of vacancy-type defects in as-grown and 3 MeV electron-irradiated 6H-SiC studied by positron lifetime Measurement
A. Kawasuso, H. Itoh, S. Okada and H. Okumura
J. Appl. Phys. 80 (1996) 5639-5645.
Positron annihilation in electron-irradiated SiGe bulk crystals
A. Kawasuso, S. Okada, M. Suezawa, I. Yonenaga and T. Honda
J. Appl. Phys. 81(1997) 2916-2918.
Anomalous temperature dependence of positron trapping due to divacancies in Si
A. Kawasuso and S. Okada
Jpn. J. Appl. Phys. 36 (1997) 605-611.
Vacancy-hydrogen interaction in proton-implanted Si studied by positron lifetime and infrared absorption measurements
A. Kawasuso, H. Arai, S. Okada
Materials Science Forum, 255-257 (1997) 548-550.
Positron 2D-ACAR Study of Divacancies in Si: Experiments and Theory
M. Hasegawa, Z. Tang, T. Chiba, M. Saito, A. Kawasuso, T. Akahane, Z-Q. Li, Y. Kawazoe and S. Yamaguchi
Materials Sceince Forum, 255-257 (1997) 414-416.
Positron annihilation study of electron irradiated SiGe bulk alloys
A. Kawasuso, S. Okada, I. Yonenaga, T. Honda, M. Suezawa
Materials Sceince Forum, 258-263 (1997) 127-132.
Anisotropy in the positron 2D angular correlation of annihilation radiation for singly negative divacancies in Si
Z. Tang, M. Hasegawa, T. Chiba, M. Saito, A. Kawasuso, Z.Q.Li, R.T.Fu, T. Akahane, Y. Kawazoe and S. Yamaguchi
Phys. Rev. Lett. 78 (1997) 2236-2239.
Characterization of defects in electron irradiated 6H-SiC by positron lifetime and electron spin resonance
A. Kawasuso, H. Itoh, D. Cha, and S. Okada
Materials Science Forum, 264-268 (1997) 611-614.
Vacancy production in 6H-SiC irradiated with 3 MeV electrons studied by positron lifetime spectroscoty
A. Kawasuso, H. Itoh, T. Ohshima, K. Abe and S. Okada
J. Appl. Phys. 82 (1997) 3232-3238.
Intrinsic defects in cubic silicon carbide
H. Itoh, A. Kawasuso, T. Ohshima, M. Yoshikawa, I. Nashiyama, S. Tanigawa, S. Misawa, H. Okumura and S. Yoshida
Phys. Stat. Sol. (a) 162 (1997) 173-198.
1996
バルク半導体中の欠陥
河裾厚男、長谷川雅幸, 日本金属学会報 ”まてりあ” 第35巻 第2号(1996)130.
1995
An annealing study of defects induced by electron irradition of Czochralski-grown Si using postiron lifetime technique
A. Kawasuso, M. Hasegawa, M. Suezawa, S. Yamaguchi and K. Sumino
Applied Surface Science, 85 (1995) 280-286.
Annealing processes of radiation-induced defects in Si; Analysis using positron lifetime measurement
A. Kawasuso, M. Hasegawa, M. Suezawa, S. Yamaguchi and K. Sumino
Materials Science Forum, 175-178 (1995) 423-426.
Positron 2D-ACAR study on divacancy in Si
T. Chiba, A. Kawasuso, M. Hasegawa, M. Suezawa, T. Akahane, and K. Sumino
Materials Science Forum, 175-178 (1995)327-330.
Charge state dependences of positron trapping rates associated with divacancies and vacancy-phosphorus pairs in Si
A. Kawasuso, M. Hasegawa, M. Suezawa, S. Yamaguchi and K. Sumino
Jpn. J. Appl. Phys. 34 (1995) 2197-2206.
Positron annihilation in divacancies in Si: Lifetime and 2D-ACAR
M. Hasegawa, A. Kawasuso, T. Chiba, T. Akahane, M. Suezawa, S. Yamagichi and K. Sumino
Appl. Phys. A, 61 (1995) 65-70.
Positron annihilations associated with defects in plastically deformed Si
A. Kawasuso, M. Suezawa, M. Hasegawa, S. Yamaguchi and K. Sumino
Jpn. J. Appl. Phys. 34 (1995) 4579-4586.
A positron lifetime study of plastically deformed Si
A. Kawasuso, M. Suezawa, M. Hasegawa, S. Yamaguchi and K. Sumino
Materials Science Forum, 196-201 (1995) 1177-1182.
Positron annihilation 2D-ACRA study of divacancies and vacancy-oxygen pairs in Si
M. Hasegawa, T. Chiba, A. Kawasuso, T. Akahane, M. Suezawa, S. Yamagichi and K. Sumino
Materials Science Forum, 196-201 (1995) 1481-1489.
Study of divacancy in Si using positron lifetime measurement
A. Kawasuso, M. Hasegawa, M. Suezawa, S. Yamaguchi and K. Sumino
Hyperfine Interactions, 84 (1994) 397-406.
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Adobe Reader provided by Adobe is required to view PDF format files.